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Vishay Dual N/P-Channel MOSFET, 4.3 A, 6 A, 30 V, 8-Pin SOIC SI4532CDY-T1-GE3

RS Stock No.: 787-9020Brand: VishayManufacturers Part No.: SI4532CDY-T1-GE3
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Technical documents

Specifications

Brand

Vishay

Channel Type

N, P

Maximum Continuous Drain Current

4.3 A, 6 A

Maximum Drain Source Voltage

30 V

Package Type

SOIC

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

65 mΩ, 140 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

2.78 W

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

6 nC @ 10 V, 7.8 nC @ 10 V

Maximum Operating Temperature

+150 °C

Length

5mm

Width

4mm

Transistor Material

Si

Number of Elements per Chip

2

Height

1.5mm

Minimum Operating Temperature

-55 °C

Product details

Dual N/P-Channel MOSFET, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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Stock information temporarily unavailable.

₪ 100.20

₪ 5.01 Each (In a Pack of 20) (ex VAT)

₪ 117.23

₪ 5.862 Each (In a Pack of 20) (inc. VAT)

Vishay Dual N/P-Channel MOSFET, 4.3 A, 6 A, 30 V, 8-Pin SOIC SI4532CDY-T1-GE3
Select packaging type

₪ 100.20

₪ 5.01 Each (In a Pack of 20) (ex VAT)

₪ 117.23

₪ 5.862 Each (In a Pack of 20) (inc. VAT)

Vishay Dual N/P-Channel MOSFET, 4.3 A, 6 A, 30 V, 8-Pin SOIC SI4532CDY-T1-GE3
Stock information temporarily unavailable.
Select packaging type

Stock information temporarily unavailable.

Please check again later.

quantityUnit pricePer Pack
20 - 80₪ 5.01₪ 100.20
100+₪ 3.615₪ 72.30

Ideate. Create. Collaborate

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
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Technical documents

Specifications

Brand

Vishay

Channel Type

N, P

Maximum Continuous Drain Current

4.3 A, 6 A

Maximum Drain Source Voltage

30 V

Package Type

SOIC

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

65 mΩ, 140 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

2.78 W

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

6 nC @ 10 V, 7.8 nC @ 10 V

Maximum Operating Temperature

+150 °C

Length

5mm

Width

4mm

Transistor Material

Si

Number of Elements per Chip

2

Height

1.5mm

Minimum Operating Temperature

-55 °C

Product details

Dual N/P-Channel MOSFET, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more