MOSFETs
MOSFETs, also known as MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals. It acts very similarly to a switc...
Showing 1-20 of 12448 products
P.O.A.
Check stock
10
Infineon
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Type N
MOSFET
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270A
40V
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-
DirectFET
DirectFET
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Surface
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-
-
-
1mΩ
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-
-
-
-
1.3V
±20 V
-55°C
220nC
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3.8W
175°C
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-
-
RoHS, Lead-Free
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-
-
-
-
-
-
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-
-
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No
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-
P.O.A.
Check stock
1
Infineon
-
Type N
MOSFET
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-
270A
40V
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-
DirectFET
DirectFET
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Surface
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-
-
-
1mΩ
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-
-
-
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1.3V
±20 V
-55°C
220nC
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3.8W
175°C
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-
-
RoHS, Lead-Free
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-
-
-
-
-
-
-
-
-
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No
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-
-
Infineon
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Type N
MOSFET
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-
1.9A
55V
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-
SOT-223
HEXFET Fifth Generation
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Surface
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-
-
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0.16Ω
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-
-
-
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1V
20 V
-55°C
7nC
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2.1W
150°C
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-
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Lead-Free
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-
-
-
-
-
-
-
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No
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304-40-532
P.O.A.
Check stock
10
Infineon
-
Type N
MOSFET
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-
1.9A
55V
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-
SOT-223
HEXFET Fifth Generation
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Surface
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-
-
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0.16Ω
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-
-
-
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1V
20 V
-55°C
7nC
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2.1W
150°C
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-
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Lead-Free
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-
-
-
-
-
-
-
-
-
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No
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-
-
Infineon
-
Type N
MOSFET
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-
43A
150V
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TO-263
HEXFET
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Surface
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3
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-
0.042Ω
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-
-
-
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1.3V
20 V
-55°C
20nC
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200W
175°C
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-
EIA 418
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-
-
-
-
-
-
-
-
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No
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-
P.O.A.
Check stock
5
Infineon
-
Type N
MOSFET
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-
43A
150V
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-
TO-263
HEXFET
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Surface
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3
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-
0.042Ω
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-
-
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1.3V
20 V
-55°C
20nC
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200W
175°C
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-
-
EIA 418
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-
-
-
-
-
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No
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-
Infineon
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Type P
IR MOSFET
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-4A
-30V
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SO-8
HEXFET
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Through Hole
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8
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160mΩ
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Dual
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-
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±20 V
-55°C
16.7nC
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175°C
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5mm
RoHS
4 mm
1.75mm
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No
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-
304-40-518
P.O.A.
Check stock
10
Infineon
-
Type P
IR MOSFET
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-4A
-30V
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SO-8
HEXFET
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Through Hole
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8
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160mΩ
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Dual
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-
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±20 V
-55°C
16.7nC
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175°C
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5mm
RoHS
4 mm
1.75mm
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-
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-
-
-
-
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No
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-
Infineon
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Type P
MOSFET
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-21A
-30V
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PQFN
HEXFET
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Surface
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8
-
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3.7mΩ
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-
-
-
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-1.2V
20 V
-55°C
58nC
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3.1W
150°C
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5mm
RoHS
6 mm
0.39mm
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-
-
-
-
-
-
-
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No
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-
P.O.A.
Check stock
5
Infineon
-
Type P
MOSFET
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-21A
-30V
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-
PQFN
HEXFET
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Surface
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8
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3.7mΩ
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-
-
-
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-1.2V
20 V
-55°C
58nC
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3.1W
150°C
-
-
5mm
RoHS
6 mm
0.39mm
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-
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-
-
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-
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No
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-
Infineon
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Type P
MOSFET
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5A
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SO-8
HEXFET
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Surface
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8
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0.13Ω
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-
-
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-1.2V
20 V
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27nC
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-
-
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-
5mm
RoHS
4 mm
1.75mm
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-
-
-
-
-
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No
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-
304-40-517
P.O.A.
Check stock
10
Infineon
-
Type P
MOSFET
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-
5A
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SO-8
HEXFET
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Surface
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8
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0.13Ω
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-
-
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-1.2V
20 V
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27nC
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-
-
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5mm
RoHS
4 mm
1.75mm
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-
-
-
-
-
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No
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-
P.O.A.
Check stock
10
P.O.A.
Check stock
5
Infineon
-
Type P, Type N
MOSFET
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-
6.8A
30V
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SO-8
IRF
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Surface
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8
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-
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1.2V
±20 V
-55°C
8.1nC
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2W
150°C
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RoHS Compliant
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-
P.O.A.
Check stock
10
Infineon
-
Type P, Type N
MOSFET
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-
6.8A
30V
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-
SO-8
IRF
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Surface
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8
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1.2V
±20 V
-55°C
8.1nC
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2W
150°C
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RoHS Compliant
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-
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-
Infineon
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Type P
MOSFET
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10A
30V
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SO-8
IRF
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Surface
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8
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0.035Ω
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-
-
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1V
20 V
-55°C
61nC
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2.5W
150°C
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-
5mm
RoHS
4 mm
1.75mm
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-
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P.O.A.
Check stock
5
Infineon
-
Type P
MOSFET
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-
10A
30V
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SO-8
IRF
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Surface
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8
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0.035Ω
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-
-
-
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1V
20 V
-55°C
61nC
-
2.5W
150°C
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-
5mm
RoHS
4 mm
1.75mm
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-
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-
Infineon
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Type P
MOSFET
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13A
-12V
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SO-8
IRF7410
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Surface
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8
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7mΩ
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-
-
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-1.2V
±8 V
-55°C
91nC
-
2.5W
150°C
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RoHS
-
-
-
-
-
-
-
-
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No
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