MOSFETs
MOSFETs, also known as MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals. It acts very similarly to a switc...
Showing 1-20 of 12452 products
P.O.A.
Check stock
10
Infineon
Type N
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-
MOSFET
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270A
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40V
-
DirectFET
DirectFET
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-
Surface
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-
1mΩ
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-
-
-
-
-
-55°C
220nC
3.8W
1.3V
±20 V
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175°C
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-
-
-
RoHS, Lead-Free
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-
-
-
-
-
-
-
-
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No
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P.O.A.
Check stock
1
Infineon
Type N
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-
MOSFET
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270A
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40V
-
DirectFET
DirectFET
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-
Surface
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-
1mΩ
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-
-
-
-
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-55°C
220nC
3.8W
1.3V
±20 V
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175°C
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-
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-
RoHS, Lead-Free
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-
-
-
-
-
-
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-
-
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No
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Infineon
Type N
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-
MOSFET
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1.9A
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55V
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SOT-223
HEXFET Fifth Generation
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-
Surface
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-
0.16Ω
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-
-
-
-
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-55°C
7nC
2.1W
1V
20 V
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150°C
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-
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Lead-Free
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-
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-
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304-40-532
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No
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P.O.A.
Check stock
10
Infineon
Type N
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-
MOSFET
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1.9A
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55V
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SOT-223
HEXFET Fifth Generation
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-
Surface
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-
0.16Ω
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-
-
-
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-55°C
7nC
2.1W
1V
20 V
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150°C
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-
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Lead-Free
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-
-
-
-
-
-
-
-
-
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No
-
Infineon
Type N
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-
MOSFET
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43A
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150V
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TO-263
HEXFET
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-
Surface
3
-
0.042Ω
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-
-
-
-
-
-55°C
20nC
200W
1.3V
20 V
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175°C
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-
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-
EIA 418
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-
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-
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-
-
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-
-
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No
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P.O.A.
Check stock
5
Infineon
Type N
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-
MOSFET
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43A
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150V
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TO-263
HEXFET
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-
Surface
3
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0.042Ω
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-
-
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-55°C
20nC
200W
1.3V
20 V
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175°C
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-
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EIA 418
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No
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Infineon
Type P
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IR MOSFET
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-4A
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-30V
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SO-8
HEXFET
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-
Through Hole
8
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160mΩ
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-
Dual
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-
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-55°C
16.7nC
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-
±20 V
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175°C
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-
5mm
4 mm
RoHS
1.75mm
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-
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304-40-518
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No
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P.O.A.
Check stock
10
Infineon
Type P
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-
IR MOSFET
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-4A
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-30V
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SO-8
HEXFET
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-
Through Hole
8
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160mΩ
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-
Dual
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-
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-55°C
16.7nC
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-
±20 V
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175°C
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-
5mm
4 mm
RoHS
1.75mm
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-
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-
-
-
-
-
-
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No
-
Infineon
Type P
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-
MOSFET
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-21A
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-30V
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PQFN
HEXFET
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-
Surface
8
-
3.7mΩ
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-
-
-
-
-
-55°C
58nC
3.1W
-1.2V
20 V
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150°C
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-
5mm
6 mm
RoHS
0.39mm
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-
-
-
-
-
-
-
-
-
-
No
-
P.O.A.
Check stock
5
Infineon
Type P
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-
MOSFET
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-21A
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-30V
-
PQFN
HEXFET
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-
Surface
8
-
3.7mΩ
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-
-
-
-
-
-55°C
58nC
3.1W
-1.2V
20 V
-
150°C
-
-
5mm
6 mm
RoHS
0.39mm
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-
-
-
-
-
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No
-
Infineon
Type P
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-
MOSFET
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5A
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-
-
SO-8
HEXFET
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-
Surface
8
-
0.13Ω
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-
-
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-
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27nC
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-1.2V
20 V
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-
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-
5mm
4 mm
RoHS
1.75mm
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-
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-
-
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304-40-517
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-
No
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P.O.A.
Check stock
10
Infineon
Type P
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-
MOSFET
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5A
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-
-
SO-8
HEXFET
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Surface
8
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0.13Ω
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-
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27nC
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-1.2V
20 V
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-
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-
5mm
4 mm
RoHS
1.75mm
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-
-
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-
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-
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No
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P.O.A.
Check stock
10
P.O.A.
Check stock
5
Infineon
Type P, Type N
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-
MOSFET
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6.8A
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30V
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SO-8
IRF
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-
Surface
8
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-
-
-
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-55°C
8.1nC
2W
1.2V
±20 V
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150°C
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-
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-
RoHS Compliant
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P.O.A.
Check stock
10
Infineon
Type P, Type N
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-
MOSFET
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6.8A
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30V
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SO-8
IRF
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-
Surface
8
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-
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-55°C
8.1nC
2W
1.2V
±20 V
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150°C
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-
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RoHS Compliant
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-
Infineon
Type P
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-
MOSFET
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10A
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30V
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SO-8
IRF
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Surface
8
-
0.035Ω
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-
-
-
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-
-55°C
61nC
2.5W
1V
20 V
-
150°C
-
-
5mm
4 mm
RoHS
1.75mm
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P.O.A.
Check stock
5
Infineon
Type P
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-
MOSFET
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10A
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30V
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SO-8
IRF
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-
Surface
8
-
0.035Ω
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-
-
-
-
-
-55°C
61nC
2.5W
1V
20 V
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150°C
-
-
5mm
4 mm
RoHS
1.75mm
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-
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-
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-
Infineon
Type P
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-
MOSFET
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13A
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-12V
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SO-8
IRF7410
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Surface
8
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7mΩ
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-
-
-
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-
-55°C
91nC
2.5W
-1.2V
±8 V
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150°C
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-
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RoHS
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-
-
-
-
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-
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No
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