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Dual N/P-Channel MOSFET, 3 A, 3.7 A, 30 V, 8-Pin SOIC Vishay SI4532ADY-T1-E3

RS Stock No.: 710-4720Brand: VishayManufacturers Part No.: SI4532ADY-T1-E3
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Technical documents

Specifications

Brand

Vishay

Channel Type

N, P

Maximum Continuous Drain Current

3 A, 3.7 A

Maximum Drain Source Voltage

30 V

Package Type

SOIC

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

53 mΩ, 80 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

1.13 W

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-20 V, +20 V

Width

4mm

Transistor Material

Si

Typical Gate Charge @ Vgs

10 nC @ 10 V, 8 nC @ 10 V

Number of Elements per Chip

2

Maximum Operating Temperature

+150 °C

Length

5mm

Minimum Operating Temperature

-55 °C

Height

1.55mm

Product details

Dual N/P-Channel MOSFET, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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P.O.A.

Dual N/P-Channel MOSFET, 3 A, 3.7 A, 30 V, 8-Pin SOIC Vishay SI4532ADY-T1-E3
Select packaging type

P.O.A.

Dual N/P-Channel MOSFET, 3 A, 3.7 A, 30 V, 8-Pin SOIC Vishay SI4532ADY-T1-E3
Stock information temporarily unavailable.
Select packaging type

Stock information temporarily unavailable.

Please check again later.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
You may be interested in

Technical documents

Specifications

Brand

Vishay

Channel Type

N, P

Maximum Continuous Drain Current

3 A, 3.7 A

Maximum Drain Source Voltage

30 V

Package Type

SOIC

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

53 mΩ, 80 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

1.13 W

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-20 V, +20 V

Width

4mm

Transistor Material

Si

Typical Gate Charge @ Vgs

10 nC @ 10 V, 8 nC @ 10 V

Number of Elements per Chip

2

Maximum Operating Temperature

+150 °C

Length

5mm

Minimum Operating Temperature

-55 °C

Height

1.55mm

Product details

Dual N/P-Channel MOSFET, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
You may be interested in