Technical Documents
Specifications
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
80A
Maximum Drain Source Voltage Vds
60V
Package Type
TO-220
Series
STripFET F7
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
5mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
160W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
13.6nC
Maximum Gate Source Voltage Vgs
20V
Forward Voltage Vf
1.2V
Maximum Operating Temperature
175°C
Height
9.15mm
Length
10.4mm
Standards/Approvals
No
Width
4.6mm
Automotive Standard
No
Product Details
The STMicroelectronics STripFET™ F7 series of low-voltage MOSFETs have lower device on-state resistance, with reduced internal capacitance and gate charge for Faster and more efficient switching.
Stock information temporarily unavailable.
₪ 588.00
₪ 11.76 Each (Supplied in a Tube) (ex VAT)
₪ 687.96
₪ 13.759 Each (Supplied in a Tube) (inc. VAT)
Production pack (Tube)
50
₪ 588.00
₪ 11.76 Each (Supplied in a Tube) (ex VAT)
₪ 687.96
₪ 13.759 Each (Supplied in a Tube) (inc. VAT)
Stock information temporarily unavailable.
Production pack (Tube)
50
| quantity | Unit price | Per Tube |
|---|---|---|
| 50 - 195 | ₪ 11.76 | ₪ 58.80 |
| 200 - 995 | ₪ 9.15 | ₪ 45.75 |
| 1000 - 1995 | ₪ 6.465 | ₪ 32.32 |
| 2000+ | ₪ 6.285 | ₪ 31.42 |
Technical Documents
Specifications
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
80A
Maximum Drain Source Voltage Vds
60V
Package Type
TO-220
Series
STripFET F7
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
5mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
160W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
13.6nC
Maximum Gate Source Voltage Vgs
20V
Forward Voltage Vf
1.2V
Maximum Operating Temperature
175°C
Height
9.15mm
Length
10.4mm
Standards/Approvals
No
Width
4.6mm
Automotive Standard
No
Product Details
The STMicroelectronics STripFET™ F7 series of low-voltage MOSFETs have lower device on-state resistance, with reduced internal capacitance and gate charge for Faster and more efficient switching.