Technical Documents
Specifications
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
180A
Maximum Drain Source Voltage Vds
100V
Series
STripFET H7
Package Type
H2PAK
Mount Type
Surface
Pin Count
7
Maximum Drain Source Resistance Rds
2.3mΩ
Channel Mode
Enhancement
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
180nC
Maximum Gate Source Voltage Vgs
20V
Forward Voltage Vf
1.3V
Maximum Power Dissipation Pd
315W
Maximum Operating Temperature
175°C
Length
15.25mm
Standards/Approvals
No
Width
10.4mm
Height
4.8mm
Automotive Standard
No
Product Details
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
Stock information temporarily unavailable.
₪ 130.53
₪ 65.265 Each (In a Pack of 2) (ex VAT)
₪ 152.72
₪ 76.36 Each (In a Pack of 2) (inc. VAT)
Standard
2
₪ 130.53
₪ 65.265 Each (In a Pack of 2) (ex VAT)
₪ 152.72
₪ 76.36 Each (In a Pack of 2) (inc. VAT)
Stock information temporarily unavailable.
Standard
2
| quantity | Unit price | Per Pack |
|---|---|---|
| 2 - 8 | ₪ 65.265 | ₪ 130.53 |
| 10 - 48 | ₪ 59.835 | ₪ 119.67 |
| 50 - 248 | ₪ 55.62 | ₪ 111.24 |
| 250 - 498 | ₪ 55.05 | ₪ 110.10 |
| 500+ | ₪ 44.775 | ₪ 89.55 |
Technical Documents
Specifications
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
180A
Maximum Drain Source Voltage Vds
100V
Series
STripFET H7
Package Type
H2PAK
Mount Type
Surface
Pin Count
7
Maximum Drain Source Resistance Rds
2.3mΩ
Channel Mode
Enhancement
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
180nC
Maximum Gate Source Voltage Vgs
20V
Forward Voltage Vf
1.3V
Maximum Power Dissipation Pd
315W
Maximum Operating Temperature
175°C
Length
15.25mm
Standards/Approvals
No
Width
10.4mm
Height
4.8mm
Automotive Standard
No
Product Details
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.