STMicroelectronics STripFET H7 N-Channel MOSFET, 180 A, 100 V, 3-Pin H2PAK-2 STH310N10F7-2

RS Stock No.: 786-3707PBrand: STMicroelectronicsManufacturers Part No.: STH310N10F7-2
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Technical documents

Specifications

Channel Type

N

Maximum Continuous Drain Current

180 A

Maximum Drain Source Voltage

100 V

Series

STripFET H7

Package Type

H2PAK-2

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

2.3 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

315 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

10.4mm

Transistor Material

Si

Number of Elements per Chip

1

Length

15.8mm

Typical Gate Charge @ Vgs

180 nC @ 10 V

Maximum Operating Temperature

+175 °C

Height

4.8mm

Minimum Operating Temperature

-55 °C

Product details

N-Channel STripFET™ H7 Series, STMicroelectronics

STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.

MOSFET Transistors, STMicroelectronics

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Stock information temporarily unavailable.

₪ 2,202.75

₪ 44.055 Each (Supplied on a Reel) (ex VAT)

₪ 2,577.22

₪ 51.544 Each (Supplied on a Reel) (inc. VAT)

STMicroelectronics STripFET H7 N-Channel MOSFET, 180 A, 100 V, 3-Pin H2PAK-2 STH310N10F7-2
Select packaging type

₪ 2,202.75

₪ 44.055 Each (Supplied on a Reel) (ex VAT)

₪ 2,577.22

₪ 51.544 Each (Supplied on a Reel) (inc. VAT)

STMicroelectronics STripFET H7 N-Channel MOSFET, 180 A, 100 V, 3-Pin H2PAK-2 STH310N10F7-2

Stock information temporarily unavailable.

Select packaging type

quantityUnit pricePer Reel
50 - 248₪ 44.055₪ 88.11
250 - 498₪ 37.095₪ 74.19
500 - 998₪ 34.305₪ 68.61
1000+₪ 30.39₪ 60.78

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Technical documents

Specifications

Channel Type

N

Maximum Continuous Drain Current

180 A

Maximum Drain Source Voltage

100 V

Series

STripFET H7

Package Type

H2PAK-2

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

2.3 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

315 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

10.4mm

Transistor Material

Si

Number of Elements per Chip

1

Length

15.8mm

Typical Gate Charge @ Vgs

180 nC @ 10 V

Maximum Operating Temperature

+175 °C

Height

4.8mm

Minimum Operating Temperature

-55 °C

Product details

N-Channel STripFET™ H7 Series, STMicroelectronics

STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.

MOSFET Transistors, STMicroelectronics

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more