Technical Documents
Specifications
Brand
STMicroelectronicsChannel Type
Type N
Product Type
MOSFET
Maximum Continuous Drain Current Id
110A
Maximum Drain Source Voltage Vds
100V
Package Type
H2PAK
Series
DeepGate, STripFET
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
3.9mΩ
Channel Mode
Enhancement
Forward Voltage Vf
1.2V
Maximum Power Dissipation Pd
250W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
117nC
Maximum Operating Temperature
175°C
Height
4.8mm
Length
10.4mm
Standards/Approvals
No
Automotive Standard
No
Product Details
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
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Stock information temporarily unavailable.
₪ 22.05
₪ 11.025 Each (In a Pack of 2) (ex VAT)
₪ 25.80
₪ 12.899 Each (In a Pack of 2) (inc. VAT)
2
₪ 22.05
₪ 11.025 Each (In a Pack of 2) (ex VAT)
₪ 25.80
₪ 12.899 Each (In a Pack of 2) (inc. VAT)
Stock information temporarily unavailable.
2
Ideate. Create. Collaborate
JOIN FOR FREE
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Technical Documents
Specifications
Brand
STMicroelectronicsChannel Type
Type N
Product Type
MOSFET
Maximum Continuous Drain Current Id
110A
Maximum Drain Source Voltage Vds
100V
Package Type
H2PAK
Series
DeepGate, STripFET
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
3.9mΩ
Channel Mode
Enhancement
Forward Voltage Vf
1.2V
Maximum Power Dissipation Pd
250W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
117nC
Maximum Operating Temperature
175°C
Height
4.8mm
Length
10.4mm
Standards/Approvals
No
Automotive Standard
No
Product Details
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
