Technical Documents
Specifications
Brand
STMicroelectronicsChannel Type
Type N
Product Type
MOSFET
Maximum Continuous Drain Current Id
55A
Maximum Drain Source Voltage Vds
650V
Package Type
TO-252
Series
STD
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
45mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
70W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
14nC
Forward Voltage Vf
1.5V
Maximum Gate Source Voltage Vgs
30V
Maximum Operating Temperature
175°C
Height
2.4mm
Length
6.6mm
Standards/Approvals
UL
Width
6.2mm
Automotive Standard
AEC-Q101
Product Details
The STMicroelectronics MOSFET device is an N-channel Power MOSFET developed using STMicroelectronics STripFET H5 technology. This device has been optimized to achieve very low on-state resistance.
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Stock information temporarily unavailable.
P.O.A.
Each (In a Pack of 5) (ex VAT)
Standard
5
P.O.A.
Each (In a Pack of 5) (ex VAT)
Stock information temporarily unavailable.
Standard
5
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Technical Documents
Specifications
Brand
STMicroelectronicsChannel Type
Type N
Product Type
MOSFET
Maximum Continuous Drain Current Id
55A
Maximum Drain Source Voltage Vds
650V
Package Type
TO-252
Series
STD
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
45mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
70W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
14nC
Forward Voltage Vf
1.5V
Maximum Gate Source Voltage Vgs
30V
Maximum Operating Temperature
175°C
Height
2.4mm
Length
6.6mm
Standards/Approvals
UL
Width
6.2mm
Automotive Standard
AEC-Q101
Product Details
The STMicroelectronics MOSFET device is an N-channel Power MOSFET developed using STMicroelectronics STripFET H5 technology. This device has been optimized to achieve very low on-state resistance.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
