STMicroelectronics MDmesh M5 N-Channel MOSFET, 33 A, 650 V, 3-Pin D2PAK STB42N65M5
Technical documents
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
33 A
Maximum Drain Source Voltage
650 V
Series
MDmesh M5
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
79 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
190 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Typical Gate Charge @ Vgs
100 nC @ 10 V
Width
10.4mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.75mm
Maximum Operating Temperature
+150 °C
Height
4.6mm
Product details
N-channel MDmesh™ M5 Series, STMicroelectronics
The MDmesh M5 power MOSFETs are optimised for high-power PFC and PWM topologies. Main features include a low on-state losses per silicon area combined with low gate charge. They are designed for energy-conscious, compact and reliable hard switching applications, such as solar power converters, power supplies for consumer products and electronic lighting controls.
MOSFET Transistors, STMicroelectronics
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Stock information temporarily unavailable.
₪ 102.22
₪ 102.22 Each (ex VAT)
₪ 119.60
₪ 119.60 Each (inc. VAT)
Standard
1
₪ 102.22
₪ 102.22 Each (ex VAT)
₪ 119.60
₪ 119.60 Each (inc. VAT)
Stock information temporarily unavailable.
Standard
1
| quantity | Unit price |
|---|---|
| 1 - 9 | ₪ 102.22 |
| 10 - 49 | ₪ 87.66 |
| 50 - 149 | ₪ 84.94 |
| 150 - 499 | ₪ 74.68 |
| 500+ | ₪ 66.06 |
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Technical documents
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
33 A
Maximum Drain Source Voltage
650 V
Series
MDmesh M5
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
79 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
190 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Typical Gate Charge @ Vgs
100 nC @ 10 V
Width
10.4mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.75mm
Maximum Operating Temperature
+150 °C
Height
4.6mm
Product details
N-channel MDmesh™ M5 Series, STMicroelectronics
The MDmesh M5 power MOSFETs are optimised for high-power PFC and PWM topologies. Main features include a low on-state losses per silicon area combined with low gate charge. They are designed for energy-conscious, compact and reliable hard switching applications, such as solar power converters, power supplies for consumer products and electronic lighting controls.
MOSFET Transistors, STMicroelectronics
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products