Technical documents
Specifications
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
320 mA
Maximum Drain Source Voltage
60 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
2.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.3V
Maximum Power Dissipation
420 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
1.4mm
Transistor Material
Si
Number of Elements per Chip
1
Length
3.04mm
Typical Gate Charge @ Vgs
0.7 nC @ 4.5 V
Maximum Operating Temperature
+150 °C
Height
1.01mm
Minimum Operating Temperature
-55 °C
Product details
N-Channel MOSFET with Schottky Diode, ON Semiconductor
MOSFET Transistors, ON Semiconductor
₪ 288.00
₪ 0.72 Each (Supplied on a Reel) (ex VAT)
₪ 336.96
₪ 0.842 Each (Supplied on a Reel) (inc. VAT)
Production pack (Reel)
400
₪ 288.00
₪ 0.72 Each (Supplied on a Reel) (ex VAT)
₪ 336.96
₪ 0.842 Each (Supplied on a Reel) (inc. VAT)
Stock information temporarily unavailable.
Production pack (Reel)
400
Stock information temporarily unavailable.
| quantity | Unit price | Per Reel |
|---|---|---|
| 400 - 600 | ₪ 0.72 | ₪ 144.00 |
| 800 - 1400 | ₪ 0.66 | ₪ 132.00 |
| 1600 - 2200 | ₪ 0.57 | ₪ 114.00 |
| 2400+ | ₪ 0.51 | ₪ 102.00 |
Technical documents
Specifications
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
320 mA
Maximum Drain Source Voltage
60 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
2.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.3V
Maximum Power Dissipation
420 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
1.4mm
Transistor Material
Si
Number of Elements per Chip
1
Length
3.04mm
Typical Gate Charge @ Vgs
0.7 nC @ 4.5 V
Maximum Operating Temperature
+150 °C
Height
1.01mm
Minimum Operating Temperature
-55 °C
Product details


