Technical documents
Specifications
Brand
NexperiaChannel Type
N
Maximum Continuous Drain Current
360 mA
Maximum Drain Source Voltage
60 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
1.6 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.6V
Minimum Gate Threshold Voltage
0.48V
Maximum Power Dissipation
420 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Length
3mm
Typical Gate Charge @ Vgs
0.6 nC @ 4.5 V
Maximum Operating Temperature
+150 °C
Width
1.4mm
Transistor Material
Si
Height
1mm
Minimum Operating Temperature
-55 °C
Country of Origin
China
Product details
N-Channel MOSFET, 60V to 80V, Nexperia
MOSFET Transistors, NXP Semiconductors
₪ 79.50
₪ 0.795 Each (Supplied on a Reel) (ex VAT)
₪ 93.02
₪ 0.93 Each (Supplied on a Reel) (inc. VAT)
Production pack (Reel)
100
₪ 79.50
₪ 0.795 Each (Supplied on a Reel) (ex VAT)
₪ 93.02
₪ 0.93 Each (Supplied on a Reel) (inc. VAT)
Stock information temporarily unavailable.
Production pack (Reel)
100
Stock information temporarily unavailable.
| quantity | Unit price | Per Reel |
|---|---|---|
| 100 - 200 | ₪ 0.795 | ₪ 39.75 |
| 250 - 450 | ₪ 0.78 | ₪ 39.00 |
| 500 - 950 | ₪ 0.75 | ₪ 37.50 |
| 1000+ | ₪ 0.60 | ₪ 30.00 |
Technical documents
Specifications
Brand
NexperiaChannel Type
N
Maximum Continuous Drain Current
360 mA
Maximum Drain Source Voltage
60 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
1.6 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.6V
Minimum Gate Threshold Voltage
0.48V
Maximum Power Dissipation
420 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Length
3mm
Typical Gate Charge @ Vgs
0.6 nC @ 4.5 V
Maximum Operating Temperature
+150 °C
Width
1.4mm
Transistor Material
Si
Height
1mm
Minimum Operating Temperature
-55 °C
Country of Origin
China
Product details


