Technical documents
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
34 A
Maximum Drain Source Voltage
650 V
Package Type
TO-220
Series
MDmesh DM2
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
93 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
250 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Length
10.4mm
Typical Gate Charge @ Vgs
60 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
1
Width
4.6mm
Height
15.75mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.6V
Country of Origin
China
Product details
The MDmesh DM2 MOSFETs offer low RDS(on) and with the Improved diode reverse recovery time for efficiency, this series is optimised for full-bridge phase-shifted ZVS topologies.
High dV/dt capability for improved system reliability
AEC-Q101 qualified
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Stock information temporarily unavailable.
₪ 1,993.50
₪ 39.87 Each (In a Tube of 50) (ex VAT)
₪ 2,332.40
₪ 46.648 Each (In a Tube of 50) (inc. VAT)
50
₪ 1,993.50
₪ 39.87 Each (In a Tube of 50) (ex VAT)
₪ 2,332.40
₪ 46.648 Each (In a Tube of 50) (inc. VAT)
Stock information temporarily unavailable.
50
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
Technical documents
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
34 A
Maximum Drain Source Voltage
650 V
Package Type
TO-220
Series
MDmesh DM2
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
93 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
250 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Length
10.4mm
Typical Gate Charge @ Vgs
60 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
1
Width
4.6mm
Height
15.75mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.6V
Country of Origin
China
Product details
The MDmesh DM2 MOSFETs offer low RDS(on) and with the Improved diode reverse recovery time for efficiency, this series is optimised for full-bridge phase-shifted ZVS topologies.
High dV/dt capability for improved system reliability
AEC-Q101 qualified
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
