P-Channel MOSFET, 3.6 A, 40 V, 3-Pin SOT-23 Vishay Siliconix Si2319DDS-T1-GE3

RS Stock No.: 178-3663Brand: Vishay SiliconixManufacturers Part No.: Si2319DDS-T1-GE3
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Technical documents

Specifications

Brand

Vishay Siliconix

Channel Type

P

Maximum Continuous Drain Current

3.6 A

Maximum Drain Source Voltage

40 V

Series

TrenchFET

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

100 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

1.7 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Width

1.4mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

3.04mm

Typical Gate Charge @ Vgs

12.5 nC @ 10 V

Height

1.02mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Country of Origin

China

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₪ 5,445.00

₪ 1.815 Each (On a Reel of 3000) (ex VAT)

₪ 6,370.65

₪ 2.124 Each (On a Reel of 3000) (inc. VAT)

P-Channel MOSFET, 3.6 A, 40 V, 3-Pin SOT-23 Vishay Siliconix Si2319DDS-T1-GE3

3000

Available in multiples of 3000
3000₪ 5,445.00
6000₪ 10,890.00
9000₪ 16,335.00
12000₪ 21,780.00
15000₪ 27,225.00
18000₪ 32,670.00
21000₪ 38,115.00
24000₪ 43,560.00
27000₪ 49,005.00
30000₪ 54,450.00
33000₪ 59,895.00
36000₪ 65,340.00
39000₪ 70,785.00
42000₪ 76,230.00
45000₪ 81,675.00

₪ 5,445.00

₪ 1.815 Each (On a Reel of 3000) (ex VAT)

₪ 6,370.65

₪ 2.124 Each (On a Reel of 3000) (inc. VAT)

P-Channel MOSFET, 3.6 A, 40 V, 3-Pin SOT-23 Vishay Siliconix Si2319DDS-T1-GE3
Stock information temporarily unavailable.

3000

Available in multiples of 3000
3000₪ 5,445.00
6000₪ 10,890.00
9000₪ 16,335.00
12000₪ 21,780.00
15000₪ 27,225.00
18000₪ 32,670.00
21000₪ 38,115.00
24000₪ 43,560.00
27000₪ 49,005.00
30000₪ 54,450.00
33000₪ 59,895.00
36000₪ 65,340.00
39000₪ 70,785.00
42000₪ 76,230.00
45000₪ 81,675.00

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical documents

Specifications

Brand

Vishay Siliconix

Channel Type

P

Maximum Continuous Drain Current

3.6 A

Maximum Drain Source Voltage

40 V

Series

TrenchFET

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

100 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

1.7 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Width

1.4mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

3.04mm

Typical Gate Charge @ Vgs

12.5 nC @ 10 V

Height

1.02mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Country of Origin

China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more