N-Channel MOSFET, 11.1 A, 650 V, 3-Pin DPAK Toshiba TK11P65W,RQ(S

RS Stock No.: 133-2796Brand: ToshibaManufacturers Part No.: TK11P65W,RQ(S
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Technical documents

Specifications

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

11.1 A

Maximum Drain Source Voltage

650 V

Package Type

DPAK (TO-252)

Series

DTMOSIV

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

440 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

100 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Transistor Material

Si

Length

6.6mm

Typical Gate Charge @ Vgs

25 nC @ 10 V

Maximum Operating Temperature

+150 °C

Width

6.1mm

Number of Elements per Chip

1

Forward Diode Voltage

1.7V

Height

2.3mm

Country of Origin

Japan

Product details

MOSFET Transistors, Toshiba

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₪ 58.05

₪ 11.61 Each (In a Pack of 5) (ex VAT)

₪ 67.92

₪ 13.584 Each (In a Pack of 5) (inc. VAT)

N-Channel MOSFET, 11.1 A, 650 V, 3-Pin DPAK Toshiba TK11P65W,RQ(S

5

Available in multiples of 5
5₪ 58.05
10₪ 116.10
15₪ 174.15
20₪ 232.20
25₪ 265.50
30₪ 318.60
35₪ 371.70
40₪ 424.80
45₪ 477.90
50₪ 519.75
55₪ 571.72
60₪ 623.70
65₪ 675.68
70₪ 727.65
75₪ 779.62

₪ 58.05

₪ 11.61 Each (In a Pack of 5) (ex VAT)

₪ 67.92

₪ 13.584 Each (In a Pack of 5) (inc. VAT)

N-Channel MOSFET, 11.1 A, 650 V, 3-Pin DPAK Toshiba TK11P65W,RQ(S
Stock information temporarily unavailable.

5

Available in multiples of 5
5₪ 58.05
10₪ 116.10
15₪ 174.15
20₪ 232.20
25₪ 265.50
30₪ 318.60
35₪ 371.70
40₪ 424.80
45₪ 477.90
50₪ 519.75
55₪ 571.72
60₪ 623.70
65₪ 675.68
70₪ 727.65
75₪ 779.62

Buy in bulk

quantityUnit pricePer Pack
5 - 20₪ 11.61₪ 58.05
25 - 45₪ 10.62₪ 53.10
50 - 245₪ 10.395₪ 51.98
250 - 495₪ 10.065₪ 50.32
500+₪ 9.975₪ 49.88

Ideate. Create. Collaborate

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design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical documents

Specifications

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

11.1 A

Maximum Drain Source Voltage

650 V

Package Type

DPAK (TO-252)

Series

DTMOSIV

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

440 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

100 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Transistor Material

Si

Length

6.6mm

Typical Gate Charge @ Vgs

25 nC @ 10 V

Maximum Operating Temperature

+150 °C

Width

6.1mm

Number of Elements per Chip

1

Forward Diode Voltage

1.7V

Height

2.3mm

Country of Origin

Japan

Product details

MOSFET Transistors, Toshiba

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more