N-Channel MOSFET, 2 A, 40 V, 3-Pin SOT-23 Toshiba SSM3K339R

RS Stock No.: 171-2402Brand: ToshibaManufacturers Part No.: SSM3K339R
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Technical documents

Specifications

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

2 A

Maximum Drain Source Voltage

40 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

390 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

2 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±12 V

Width

1.8mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

2.9mm

Typical Gate Charge @ Vgs

1.1 nC @ 4.2 V

Height

0.7mm

Forward Diode Voltage

1.2V

Country of Origin

Thailand

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₪ 0.629

Each (On a Reel of 3000) (ex VAT)

₪ 0.736

Each (On a Reel of 3000) (inc. VAT)

N-Channel MOSFET, 2 A, 40 V, 3-Pin SOT-23 Toshiba SSM3K339R

3000

Available in multiples of 3000
3000₪ 1,887.84
6000₪ 3,691.78
9000₪ 5,285.95
12000₪ 7,047.94
15000₪ 8,809.92
18000₪ 10,571.90
21000₪ 12,333.89
24000₪ 14,095.87
27000₪ 15,857.86
30000₪ 17,619.84
33000₪ 19,381.82
36000₪ 21,143.81
39000₪ 22,905.79
42000₪ 24,667.78
45000₪ 26,429.76

₪ 0.629

Each (On a Reel of 3000) (ex VAT)

₪ 0.736

Each (On a Reel of 3000) (inc. VAT)

N-Channel MOSFET, 2 A, 40 V, 3-Pin SOT-23 Toshiba SSM3K339R
Stock information temporarily unavailable.

3000

Available in multiples of 3000
3000₪ 1,887.84
6000₪ 3,691.78
9000₪ 5,285.95
12000₪ 7,047.94
15000₪ 8,809.92
18000₪ 10,571.90
21000₪ 12,333.89
24000₪ 14,095.87
27000₪ 15,857.86
30000₪ 17,619.84
33000₪ 19,381.82
36000₪ 21,143.81
39000₪ 22,905.79
42000₪ 24,667.78
45000₪ 26,429.76

Buy in bulk

quantityUnit pricePer Reel
3000 - 3000₪ 0.629₪ 1,887.84
6000 - 6000₪ 0.615₪ 1,845.89
9000+₪ 0.587₪ 1,761.98

Ideate. Create. Collaborate

JOIN FOR FREE

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design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical documents

Specifications

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

2 A

Maximum Drain Source Voltage

40 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

390 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

2 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±12 V

Width

1.8mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

2.9mm

Typical Gate Charge @ Vgs

1.1 nC @ 4.2 V

Height

0.7mm

Forward Diode Voltage

1.2V

Country of Origin

Thailand

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more