N-Channel MOSFET, 259 A, 100 V, 3-Pin TO-220 Texas Instruments CSD19536KCS

RS Stock No.: 121-9764Brand: Texas InstrumentsManufacturers Part No.: CSD19536KCS
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Technical documents

Specifications

Brand

Texas Instruments

Channel Type

N

Maximum Continuous Drain Current

259 A

Maximum Drain Source Voltage

100 V

Series

NexFET

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

3.2 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.2V

Minimum Gate Threshold Voltage

2.1V

Maximum Power Dissipation

375 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

4.7mm

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Transistor Material

Si

Length

10.67mm

Typical Gate Charge @ Vgs

118 nC @ 10 V

Height

16.51mm

Minimum Operating Temperature

-55 °C

Country of Origin

Malaysia

Product details

N-Channel NexFET™ Power MOSFET, Texas Instruments

MOSFET Transistors, Texas Instruments

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₪ 1,722.75

₪ 34.455 Each (In a Tube of 50) (ex VAT)

₪ 2,015.62

₪ 40.312 Each (In a Tube of 50) (inc. VAT)

N-Channel MOSFET, 259 A, 100 V, 3-Pin TO-220 Texas Instruments CSD19536KCS

50

Available in multiples of 50
50₪ 1,722.75
100₪ 3,445.50
150₪ 5,168.25
200₪ 6,891.00
250₪ 6,705.00
300₪ 8,046.00
350₪ 9,387.00
400₪ 10,728.00
450₪ 12,069.00
500₪ 12,315.00
550₪ 13,546.50
600₪ 14,778.00
650₪ 16,009.50
700₪ 17,241.00
750₪ 18,472.50

₪ 1,722.75

₪ 34.455 Each (In a Tube of 50) (ex VAT)

₪ 2,015.62

₪ 40.312 Each (In a Tube of 50) (inc. VAT)

N-Channel MOSFET, 259 A, 100 V, 3-Pin TO-220 Texas Instruments CSD19536KCS
Stock information temporarily unavailable.

50

Available in multiples of 50
50₪ 1,722.75
100₪ 3,445.50
150₪ 5,168.25
200₪ 6,891.00
250₪ 6,705.00
300₪ 8,046.00
350₪ 9,387.00
400₪ 10,728.00
450₪ 12,069.00
500₪ 12,315.00
550₪ 13,546.50
600₪ 14,778.00
650₪ 16,009.50
700₪ 17,241.00
750₪ 18,472.50

Buy in bulk

quantityUnit pricePer Tube
50 - 200₪ 34.455₪ 1,722.75
250 - 450₪ 26.82₪ 1,341.00
500+₪ 24.63₪ 1,231.50

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JOIN FOR FREE

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical documents

Specifications

Brand

Texas Instruments

Channel Type

N

Maximum Continuous Drain Current

259 A

Maximum Drain Source Voltage

100 V

Series

NexFET

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

3.2 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.2V

Minimum Gate Threshold Voltage

2.1V

Maximum Power Dissipation

375 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

4.7mm

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Transistor Material

Si

Length

10.67mm

Typical Gate Charge @ Vgs

118 nC @ 10 V

Height

16.51mm

Minimum Operating Temperature

-55 °C

Country of Origin

Malaysia

Product details

N-Channel NexFET™ Power MOSFET, Texas Instruments

MOSFET Transistors, Texas Instruments

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more