Technical documents
Specifications
Brand
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
25 V
Package Type
VSON-CLIP
Series
NexFET
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
3.8 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.4V
Minimum Gate Threshold Voltage
0.9V
Maximum Power Dissipation
3.1 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +10 V
Maximum Operating Temperature
+150 °C
Length
6.1mm
Typical Gate Charge @ Vgs
14 nC @ 4.5 V
Number of Elements per Chip
1
Width
5.1mm
Transistor Material
Si
Height
1.05mm
Minimum Operating Temperature
-55 °C
Product details
N-Channel NexFET™ Power MOSFET, Texas Instruments
MOSFET Transistors, Texas Instruments
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₪ 13.327
Each (Supplied on a Reel) (ex VAT)
₪ 15.593
Each (Supplied on a Reel) (inc VAT)
5
₪ 13.327
Each (Supplied on a Reel) (ex VAT)
₪ 15.593
Each (Supplied on a Reel) (inc VAT)
5
Buy in bulk
quantity | Unit price | Per Reel |
---|---|---|
5 - 45 | ₪ 13.327 | ₪ 66.63 |
50 - 95 | ₪ 10.684 | ₪ 53.42 |
100+ | ₪ 8.754 | ₪ 43.77 |
Technical documents
Specifications
Brand
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
25 V
Package Type
VSON-CLIP
Series
NexFET
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
3.8 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.4V
Minimum Gate Threshold Voltage
0.9V
Maximum Power Dissipation
3.1 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +10 V
Maximum Operating Temperature
+150 °C
Length
6.1mm
Typical Gate Charge @ Vgs
14 nC @ 4.5 V
Number of Elements per Chip
1
Width
5.1mm
Transistor Material
Si
Height
1.05mm
Minimum Operating Temperature
-55 °C
Product details