STMicroelectronics STripFET II N-Channel MOSFET, 120 A, 75 V, 3-Pin TO-220 STP140NF75

RS Stock No.: 687-5302PBrand: STMicroelectronicsManufacturers Part No.: STP140NF75
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Technical documents

Specifications

Channel Type

N

Maximum Continuous Drain Current

120 A

Maximum Drain Source Voltage

75 V

Series

STripFET II

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

8 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

310 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

4.6mm

Transistor Material

Si

Number of Elements per Chip

1

Typical Gate Charge @ Vgs

160 nC @ 10 V

Length

10.4mm

Maximum Operating Temperature

+175 °C

Minimum Operating Temperature

-55 °C

Height

9.15mm

Product details

N-Channel STripFET™ II, STMicroelectronics

STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.

MOSFET Transistors, STMicroelectronics

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Stock information temporarily unavailable.

₪ 211.20

₪ 21.12 Each (Supplied in a Tube) (ex VAT)

₪ 247.10

₪ 24.71 Each (Supplied in a Tube) (inc. VAT)

STMicroelectronics STripFET II N-Channel MOSFET, 120 A, 75 V, 3-Pin TO-220 STP140NF75
Select packaging type

₪ 211.20

₪ 21.12 Each (Supplied in a Tube) (ex VAT)

₪ 247.10

₪ 24.71 Each (Supplied in a Tube) (inc. VAT)

STMicroelectronics STripFET II N-Channel MOSFET, 120 A, 75 V, 3-Pin TO-220 STP140NF75
Stock information temporarily unavailable.
Select packaging type

Stock information temporarily unavailable.

Please check again later.

quantityUnit pricePer Tube
10 - 18₪ 21.12₪ 42.24
20 - 48₪ 20.955₪ 41.91
50 - 98₪ 20.79₪ 41.58
100+₪ 19.005₪ 38.01

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Technical documents

Specifications

Channel Type

N

Maximum Continuous Drain Current

120 A

Maximum Drain Source Voltage

75 V

Series

STripFET II

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

8 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

310 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

4.6mm

Transistor Material

Si

Number of Elements per Chip

1

Typical Gate Charge @ Vgs

160 nC @ 10 V

Length

10.4mm

Maximum Operating Temperature

+175 °C

Minimum Operating Temperature

-55 °C

Height

9.15mm

Product details

N-Channel STripFET™ II, STMicroelectronics

STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.

MOSFET Transistors, STMicroelectronics

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more