ROHM BSM Dual SiC N-Channel SiC Power Module, 120 A, 1200 V, 4-Pin C BSM120D12P2C005

RS Stock No.: 144-2257Brand: ROHMManufacturers Part No.: BSM120D12P2C005
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Technical documents

Specifications

Brand

ROHM

Channel Type

N

Maximum Continuous Drain Current

120 A

Maximum Drain Source Voltage

1200 V

Series

BSM

Package Type

c

Mounting Type

Surface Mount

Pin Count

4

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

1.6V

Maximum Power Dissipation

935 W

Number of Elements per Chip

2

Width

45.6mm

Transistor Material

SiC

Maximum Operating Temperature

+150 °C

Length

122mm

Minimum Operating Temperature

-40 °C

Height

17mm

Country of Origin

Japan

Product details

SiC Power Modules, ROHM

The Module consists of a Silicon-Carbide (SiC) DMOS Power FET Devices with a Schottky Barrier Diode (SBD) across the Drain and Source.

Half-Bridge configuration
Low Surge Current
Low Power Switching Losses
High-Speed Switching
Low Operating Temperature

MOSFET Transistors, ROHM Semiconductor

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Stock information temporarily unavailable.

₪ 3,995.84

₪ 3,995.84 Each (ex VAT)

₪ 4,675.13

₪ 4,675.13 Each (inc. VAT)

ROHM BSM Dual SiC N-Channel SiC Power Module, 120 A, 1200 V, 4-Pin C BSM120D12P2C005

1

Available in multiples of 1
1₪ 3,995.84
2₪ 7,991.67
3₪ 11,987.50
4₪ 15,983.34
5₪ 14,786.10
6₪ 17,743.32
7₪ 20,700.54
8₪ 23,657.76
9₪ 26,614.98
10₪ 28,507.65
11₪ 31,358.42
12₪ 34,209.18
13₪ 37,059.94
14₪ 39,910.71
15₪ 42,761.48

₪ 3,995.84

₪ 3,995.84 Each (ex VAT)

₪ 4,675.13

₪ 4,675.13 Each (inc. VAT)

ROHM BSM Dual SiC N-Channel SiC Power Module, 120 A, 1200 V, 4-Pin C BSM120D12P2C005
Stock information temporarily unavailable.

1

Available in multiples of 1
1₪ 3,995.84
2₪ 7,991.67
3₪ 11,987.50
4₪ 15,983.34
5₪ 14,786.10
6₪ 17,743.32
7₪ 20,700.54
8₪ 23,657.76
9₪ 26,614.98
10₪ 28,507.65
11₪ 31,358.42
12₪ 34,209.18
13₪ 37,059.94
14₪ 39,910.71
15₪ 42,761.48

Stock information temporarily unavailable.

Please check again later.

quantityUnit price
1 - 4₪ 3,995.84
5 - 9₪ 2,957.22
10 - 24₪ 2,850.76
25+₪ 2,749.38

Ideate. Create. Collaborate

JOIN FOR FREE

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical documents

Specifications

Brand

ROHM

Channel Type

N

Maximum Continuous Drain Current

120 A

Maximum Drain Source Voltage

1200 V

Series

BSM

Package Type

c

Mounting Type

Surface Mount

Pin Count

4

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

1.6V

Maximum Power Dissipation

935 W

Number of Elements per Chip

2

Width

45.6mm

Transistor Material

SiC

Maximum Operating Temperature

+150 °C

Length

122mm

Minimum Operating Temperature

-40 °C

Height

17mm

Country of Origin

Japan

Product details

SiC Power Modules, ROHM

The Module consists of a Silicon-Carbide (SiC) DMOS Power FET Devices with a Schottky Barrier Diode (SBD) across the Drain and Source.

Half-Bridge configuration
Low Surge Current
Low Power Switching Losses
High-Speed Switching
Low Operating Temperature

MOSFET Transistors, ROHM Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more