Technical documents
Specifications
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
40 A
Maximum Drain Source Voltage
650 V
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
82 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
313 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±30 V
Width
9.65mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
10.67mm
Typical Gate Charge @ Vgs
81 nC @ 10 V
Height
4.58mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.3V
Country of Origin
China
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₪ 33.464
Each (On a Reel of 800) (ex VAT)
₪ 39.153
Each (On a Reel of 800) (inc VAT)
800
₪ 33.464
Each (On a Reel of 800) (ex VAT)
₪ 39.153
Each (On a Reel of 800) (inc VAT)
800
Buy in bulk
quantity | Unit price | Per Reel |
---|---|---|
800 - 1600 | ₪ 33.464 | ₪ 26,770.97 |
2400 - 3200 | ₪ 32.191 | ₪ 25,752.93 |
4000+ | ₪ 31.044 | ₪ 24,835.58 |
Technical documents
Specifications
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
40 A
Maximum Drain Source Voltage
650 V
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
82 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
313 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±30 V
Width
9.65mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
10.67mm
Typical Gate Charge @ Vgs
81 nC @ 10 V
Height
4.58mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.3V
Country of Origin
China