Technical documents
Specifications
Brand
NexperiaChannel Type
P
Maximum Continuous Drain Current
160 mA
Maximum Drain Source Voltage
50 V
Package Type
SOT-363
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
7.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.1V
Minimum Gate Threshold Voltage
1.1V
Maximum Power Dissipation
320 mW
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+150 °C
Length
2.2mm
Typical Gate Charge @ Vgs
0.26 nC @ 5 V
Width
1.35mm
Transistor Material
Si
Number of Elements per Chip
2
Height
1mm
Minimum Operating Temperature
-55 °C
Product details
Dual P-Channel MOSFET, Nexperia
MOSFET Transistors, NXP Semiconductors
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Please check again later.
₪ 2.965
Each (Supplied as a Tape) (ex VAT)
₪ 3.469
Each (Supplied as a Tape) (inc. VAT)
Standard
30
₪ 2.965
Each (Supplied as a Tape) (ex VAT)
₪ 3.469
Each (Supplied as a Tape) (inc. VAT)
Standard
30
Buy in bulk
quantity | Unit price | Per Tape |
---|---|---|
30 - 30 | ₪ 2.965 | ₪ 88.94 |
60 - 120 | ₪ 2.867 | ₪ 86.00 |
150 - 270 | ₪ 1.314 | ₪ 39.43 |
300 - 570 | ₪ 1.273 | ₪ 38.18 |
600+ | ₪ 1.133 | ₪ 33.98 |
Technical documents
Specifications
Brand
NexperiaChannel Type
P
Maximum Continuous Drain Current
160 mA
Maximum Drain Source Voltage
50 V
Package Type
SOT-363
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
7.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.1V
Minimum Gate Threshold Voltage
1.1V
Maximum Power Dissipation
320 mW
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+150 °C
Length
2.2mm
Typical Gate Charge @ Vgs
0.26 nC @ 5 V
Width
1.35mm
Transistor Material
Si
Number of Elements per Chip
2
Height
1mm
Minimum Operating Temperature
-55 °C
Product details