Technical documents
Specifications
Brand
InfineonChannel Type
P
Maximum Continuous Drain Current
8 A
Maximum Drain Source Voltage
30 V
Series
Si4435DYPbF
Package Type
SO-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
35 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
2.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Typical Gate Charge @ Vgs
40 nC @ 10 V
Width
4mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
5mm
Height
1.5mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
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₪ 13,200.00
₪ 3.30 Each (On a Reel of 4000) (ex VAT)
₪ 15,444.00
₪ 3.861 Each (On a Reel of 4000) (inc. VAT)
4000
₪ 13,200.00
₪ 3.30 Each (On a Reel of 4000) (ex VAT)
₪ 15,444.00
₪ 3.861 Each (On a Reel of 4000) (inc. VAT)
4000
Buy in bulk
quantity | Unit price | Per Reel |
---|---|---|
4000 - 4000 | ₪ 3.30 | ₪ 13,200.00 |
8000+ | ₪ 3.15 | ₪ 12,600.00 |
Technical documents
Specifications
Brand
InfineonChannel Type
P
Maximum Continuous Drain Current
8 A
Maximum Drain Source Voltage
30 V
Series
Si4435DYPbF
Package Type
SO-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
35 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
2.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Typical Gate Charge @ Vgs
40 nC @ 10 V
Width
4mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
5mm
Height
1.5mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V