Technical documents
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
59 A
Maximum Drain Source Voltage
30 V
Package Type
D2PAK
Mounting Type
Surface Mount
Pin Count
2 + Tab
Maximum Drain Source Resistance
12.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.25V
Minimum Gate Threshold Voltage
1.35V
Maximum Power Dissipation
57 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Width
9.65mm
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
10.67mm
Typical Gate Charge @ Vgs
9.7 nC @ 4.5 V
Height
4.83mm
Series
IRF3707ZS
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1V
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₪ 16.179
Each (In a Pack of 10) (ex VAT)
₪ 18.93
Each (In a Pack of 10) (inc. VAT)
Standard
10
₪ 16.179
Each (In a Pack of 10) (ex VAT)
₪ 18.93
Each (In a Pack of 10) (inc. VAT)
Standard
10
Buy in bulk
quantity | Unit price | Per Pack |
---|---|---|
10 - 240 | ₪ 16.179 | ₪ 161.79 |
250 - 490 | ₪ 12.53 | ₪ 125.30 |
500 - 990 | ₪ 11.201 | ₪ 112.01 |
1000+ | ₪ 9.467 | ₪ 94.67 |
Technical documents
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
59 A
Maximum Drain Source Voltage
30 V
Package Type
D2PAK
Mounting Type
Surface Mount
Pin Count
2 + Tab
Maximum Drain Source Resistance
12.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.25V
Minimum Gate Threshold Voltage
1.35V
Maximum Power Dissipation
57 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Width
9.65mm
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
10.67mm
Typical Gate Charge @ Vgs
9.7 nC @ 4.5 V
Height
4.83mm
Series
IRF3707ZS
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1V