Technical documents
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
64 A
Maximum Drain Source Voltage
250 V
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
20 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
300 W
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Number of Elements per Chip
1
Width
10.25mm
Maximum Operating Temperature
+175 °C
Length
10mm
Typical Gate Charge @ Vgs
67 nC @ 10 V
Series
IPB64N25S3-20
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Height
4.4mm
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₪ 52.104
Each (In a Pack of 5) (ex VAT)
₪ 60.962
Each (In a Pack of 5) (inc VAT)
5
₪ 52.104
Each (In a Pack of 5) (ex VAT)
₪ 60.962
Each (In a Pack of 5) (inc VAT)
5
Buy in bulk
quantity | Unit price | Per Pack |
---|---|---|
5 - 20 | ₪ 52.104 | ₪ 260.52 |
25 - 95 | ₪ 44.931 | ₪ 224.65 |
100 - 245 | ₪ 39.603 | ₪ 198.01 |
250 - 495 | ₪ 38.176 | ₪ 190.88 |
500+ | ₪ 34.862 | ₪ 174.31 |
Technical documents
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
64 A
Maximum Drain Source Voltage
250 V
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
20 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
300 W
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Number of Elements per Chip
1
Width
10.25mm
Maximum Operating Temperature
+175 °C
Length
10mm
Typical Gate Charge @ Vgs
67 nC @ 10 V
Series
IPB64N25S3-20
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Height
4.4mm