Technical documents
Specifications
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
185 mA
Maximum Drain Source Voltage
60 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
10 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
350 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
1.4mm
Transistor Material
Si
Number of Elements per Chip
1
Length
3.04mm
Typical Gate Charge @ Vgs
1.7 nC @ 15 V
Maximum Operating Temperature
+150 °C
Height
1.02mm
Minimum Operating Temperature
-55 °C
Product details
P-Channel MOSFET, 30V to 80V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
₪ 280.50
₪ 2.805 Each (Supplied on a Reel) (ex VAT)
₪ 328.18
₪ 3.282 Each (Supplied on a Reel) (inc. VAT)
Production pack (Reel)
100
₪ 280.50
₪ 2.805 Each (Supplied on a Reel) (ex VAT)
₪ 328.18
₪ 3.282 Each (Supplied on a Reel) (inc. VAT)
Production pack (Reel)
100
Stock information temporarily unavailable.
Please check again later.
quantity | Unit price | Per Reel |
---|---|---|
100 - 240 | ₪ 2.805 | ₪ 56.10 |
260 - 980 | ₪ 2.52 | ₪ 50.40 |
1000 - 2980 | ₪ 2.205 | ₪ 44.10 |
3000+ | ₪ 2.19 | ₪ 43.80 |
Technical documents
Specifications
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
185 mA
Maximum Drain Source Voltage
60 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
10 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
350 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
1.4mm
Transistor Material
Si
Number of Elements per Chip
1
Length
3.04mm
Typical Gate Charge @ Vgs
1.7 nC @ 15 V
Maximum Operating Temperature
+150 °C
Height
1.02mm
Minimum Operating Temperature
-55 °C
Product details