Technical documents
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
120 A
Maximum Drain Source Voltage
100 V
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
4.6 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
375 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
76 nC @ 10 V
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Width
4.65mm
Transistor Material
Si
Length
10.51mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.5V
Height
15.49mm
Country of Origin
Taiwan, Province Of China
Product details
N-Channel MOSFET, 100V to 150V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Stock information temporarily unavailable.
Please check again later.
₪ 25.884
Each (In a Pack of 5) (ex VAT)
₪ 30.284
Each (In a Pack of 5) (inc VAT)
5
₪ 25.884
Each (In a Pack of 5) (ex VAT)
₪ 30.284
Each (In a Pack of 5) (inc VAT)
5
Buy in bulk
quantity | Unit price | Per Pack |
---|---|---|
5 - 95 | ₪ 25.884 | ₪ 129.42 |
100 - 245 | ₪ 20.333 | ₪ 101.66 |
250 - 495 | ₪ 20.221 | ₪ 101.10 |
500 - 995 | ₪ 19.983 | ₪ 99.92 |
1000+ | ₪ 17.116 | ₪ 85.58 |
Technical documents
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
120 A
Maximum Drain Source Voltage
100 V
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
4.6 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
375 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
76 nC @ 10 V
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Width
4.65mm
Transistor Material
Si
Length
10.51mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.5V
Height
15.49mm
Country of Origin
Taiwan, Province Of China
Product details