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Vishay TrenchFET N-Channel MOSFET, 40 A, 30 V, 8-Pin PowerPAK 1212-8 SISA04DN-T1-GE3

RS Stock No.: 768-9307PBrand: VishayManufacturers Part No.: SISA04DN-T1-GE3
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Technical documents

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

40 A

Maximum Drain Source Voltage

30 V

Series

TrenchFET

Package Type

PowerPAK 1212-8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

3.1 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1.1V

Maximum Power Dissipation

52 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-16 V, +20 V

Width

3.15mm

Length

3.15mm

Typical Gate Charge @ Vgs

51 nC @ 10 V

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Number of Elements per Chip

1

Height

1.12mm

Minimum Operating Temperature

-55 °C

Product details

N-Channel MOSFET, TrenchFET Gen IV, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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Stock information temporarily unavailable.

₪ 82.20

₪ 4.11 Each (Supplied on a Reel) (ex VAT)

₪ 96.17

₪ 4.809 Each (Supplied on a Reel) (inc. VAT)

Vishay TrenchFET N-Channel MOSFET, 40 A, 30 V, 8-Pin PowerPAK 1212-8 SISA04DN-T1-GE3
Select packaging type

Production pack (Reel)

Select packaging type

Standard - each

Available in multiples of 2.

Production -

Available in multiples of 2.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

20

Available in multiples of 2
20₪ 82.20
22₪ 90.42
24₪ 98.64
26₪ 106.86
28₪ 115.08
30₪ 123.30
32₪ 131.52
34₪ 139.74
36₪ 147.96
38₪ 156.18
40₪ 164.40
42₪ 172.62
44₪ 180.84
46₪ 189.06
48₪ 197.28

₪ 82.20

₪ 4.11 Each (Supplied on a Reel) (ex VAT)

₪ 96.17

₪ 4.809 Each (Supplied on a Reel) (inc. VAT)

Vishay TrenchFET N-Channel MOSFET, 40 A, 30 V, 8-Pin PowerPAK 1212-8 SISA04DN-T1-GE3
Stock information temporarily unavailable.
Select packaging type

Production pack (Reel)

Select packaging type

Standard - each

Available in multiples of 2.

Production -

Available in multiples of 2.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

20

Available in multiples of 2
20₪ 82.20
22₪ 90.42
24₪ 98.64
26₪ 106.86
28₪ 115.08
30₪ 123.30
32₪ 131.52
34₪ 139.74
36₪ 147.96
38₪ 156.18
40₪ 164.40
42₪ 172.62
44₪ 180.84
46₪ 189.06
48₪ 197.28

Stock information temporarily unavailable.

Please check again later.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical documents

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

40 A

Maximum Drain Source Voltage

30 V

Series

TrenchFET

Package Type

PowerPAK 1212-8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

3.1 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1.1V

Maximum Power Dissipation

52 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-16 V, +20 V

Width

3.15mm

Length

3.15mm

Typical Gate Charge @ Vgs

51 nC @ 10 V

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Number of Elements per Chip

1

Height

1.12mm

Minimum Operating Temperature

-55 °C

Product details

N-Channel MOSFET, TrenchFET Gen IV, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more