Vishay TrenchFET Dual P-Channel MOSFET, 71.9 A, 80 V, 8-Pin PowerPAK SO-8 SiR681DP-T1-RE3

RS Stock No.: 228-2909Brand: VishayManufacturers Part No.: SiR681DP-T1-RE3
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Technical documents

Specifications

Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

71.9 A

Maximum Drain Source Voltage

80 V

Series

TrenchFET

Package Type

PowerPAK SO-8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

0.0112 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.6V

Number of Elements per Chip

2

Transistor Material

Si

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Stock information temporarily unavailable.

P.O.A.

Each (On a Reel of 3000) (ex VAT)

Vishay TrenchFET Dual P-Channel MOSFET, 71.9 A, 80 V, 8-Pin PowerPAK SO-8 SiR681DP-T1-RE3

P.O.A.

Each (On a Reel of 3000) (ex VAT)

Vishay TrenchFET Dual P-Channel MOSFET, 71.9 A, 80 V, 8-Pin PowerPAK SO-8 SiR681DP-T1-RE3
Stock information temporarily unavailable.

Stock information temporarily unavailable.

Please check again later.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical documents

Specifications

Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

71.9 A

Maximum Drain Source Voltage

80 V

Series

TrenchFET

Package Type

PowerPAK SO-8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

0.0112 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.6V

Number of Elements per Chip

2

Transistor Material

Si

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more