N-Channel MOSFET, 100 A, 80 V, 8-Pin PowerPAK SO-8 Vishay SIR680DP-T1-RE3

RS Stock No.: 134-9727Brand: VishayManufacturers Part No.: SIR680DP-T1-RE3
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Technical documents

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

100 A

Maximum Drain Source Voltage

80 V

Package Type

PowerPAK SO-8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

3.4 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

104 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Maximum Operating Temperature

+150 °C

Length

6.25mm

Typical Gate Charge @ Vgs

69.5 nC @ 10 V

Width

5.26mm

Number of Elements per Chip

1

Forward Diode Voltage

1.1V

Minimum Operating Temperature

-55 °C

Height

1.12mm

Series

TrenchFET

Product details

N-Channel MOSFET, TrenchFET Gen IV, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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₪ 19.62

Each (In a Pack of 2) (ex VAT)

₪ 22.955

Each (In a Pack of 2) (inc VAT)

N-Channel MOSFET, 100 A, 80 V, 8-Pin PowerPAK SO-8 Vishay SIR680DP-T1-RE3
Select packaging type

₪ 19.62

Each (In a Pack of 2) (ex VAT)

₪ 22.955

Each (In a Pack of 2) (inc VAT)

N-Channel MOSFET, 100 A, 80 V, 8-Pin PowerPAK SO-8 Vishay SIR680DP-T1-RE3
Stock information temporarily unavailable.
Select packaging type

Buy in bulk

quantityUnit pricePer Pack
2 - 28₪ 19.62₪ 39.24
30 - 148₪ 15.159₪ 30.32
150 - 748₪ 13.774₪ 27.55
750 - 1498₪ 12.222₪ 24.44
1500+₪ 11.425₪ 22.85

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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Technical documents

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

100 A

Maximum Drain Source Voltage

80 V

Package Type

PowerPAK SO-8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

3.4 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

104 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Maximum Operating Temperature

+150 °C

Length

6.25mm

Typical Gate Charge @ Vgs

69.5 nC @ 10 V

Width

5.26mm

Number of Elements per Chip

1

Forward Diode Voltage

1.1V

Minimum Operating Temperature

-55 °C

Height

1.12mm

Series

TrenchFET

Product details

N-Channel MOSFET, TrenchFET Gen IV, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more