Technical documents
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
65 A
Maximum Drain Source Voltage
100 V
Package Type
PowerPAK SO-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
5.05 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
104 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
5.26mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
6.25mm
Typical Gate Charge @ Vgs
72 nC @ 10 V
Height
1.12mm
Series
TrenchFET
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.1V
Product details
N-Channel MOSFET, TrenchFET Gen IV, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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Please check again later.
₪ 20.319
Each (In a Pack of 2) (ex VAT)
₪ 23.773
Each (In a Pack of 2) (inc VAT)
2
₪ 20.319
Each (In a Pack of 2) (ex VAT)
₪ 23.773
Each (In a Pack of 2) (inc VAT)
2
Buy in bulk
quantity | Unit price | Per Pack |
---|---|---|
2 - 28 | ₪ 20.319 | ₪ 40.64 |
30 - 148 | ₪ 15.816 | ₪ 31.63 |
150 - 748 | ₪ 14.278 | ₪ 28.56 |
750 - 1498 | ₪ 12.67 | ₪ 25.34 |
1500+ | ₪ 11.83 | ₪ 23.66 |
Technical documents
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
65 A
Maximum Drain Source Voltage
100 V
Package Type
PowerPAK SO-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
5.05 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
104 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
5.26mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
6.25mm
Typical Gate Charge @ Vgs
72 nC @ 10 V
Height
1.12mm
Series
TrenchFET
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.1V
Product details