Technical documents
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
60 V
Package Type
SO
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
2.6 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
104 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
5.26mm
Number of Elements per Chip
1
Length
6.25mm
Typical Gate Charge @ Vgs
68 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
1.12mm
Series
TrenchFET
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.1V
Product details
N-Channel MOSFET, TrenchFET Gen IV, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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Please check again later.
₪ 16.124
Each (In a Pack of 5) (ex VAT)
₪ 18.865
Each (In a Pack of 5) (inc VAT)
5
₪ 16.124
Each (In a Pack of 5) (ex VAT)
₪ 18.865
Each (In a Pack of 5) (inc VAT)
5
Buy in bulk
quantity | Unit price | Per Pack |
---|---|---|
5 - 25 | ₪ 16.124 | ₪ 80.62 |
30 - 145 | ₪ 12.474 | ₪ 62.37 |
150 - 745 | ₪ 11.215 | ₪ 56.08 |
750 - 1495 | ₪ 9.999 | ₪ 49.99 |
1500+ | ₪ 9.341 | ₪ 46.71 |
Technical documents
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
60 V
Package Type
SO
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
2.6 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
104 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
5.26mm
Number of Elements per Chip
1
Length
6.25mm
Typical Gate Charge @ Vgs
68 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
1.12mm
Series
TrenchFET
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.1V
Product details