Technical documents
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
23 A
Maximum Drain Source Voltage
40 V
Package Type
PowerPAK SO-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
6 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1.1V
Maximum Power Dissipation
39 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
5.26mm
Transistor Material
Si
Number of Elements per Chip
1
Length
6.25mm
Typical Gate Charge @ Vgs
50 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
1.12mm
Minimum Operating Temperature
-55 °C
Country of Origin
China
Product details
N-Channel MOSFET, 30V to 50V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
₪ 44.25
₪ 4.425 Each (Supplied on a Reel) (ex VAT)
₪ 51.77
₪ 5.177 Each (Supplied on a Reel) (inc. VAT)
Production pack (Reel)
10
₪ 44.25
₪ 4.425 Each (Supplied on a Reel) (ex VAT)
₪ 51.77
₪ 5.177 Each (Supplied on a Reel) (inc. VAT)
Stock information temporarily unavailable.
Production pack (Reel)
10
Stock information temporarily unavailable.
Technical documents
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
23 A
Maximum Drain Source Voltage
40 V
Package Type
PowerPAK SO-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
6 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1.1V
Maximum Power Dissipation
39 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
5.26mm
Transistor Material
Si
Number of Elements per Chip
1
Length
6.25mm
Typical Gate Charge @ Vgs
50 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
1.12mm
Minimum Operating Temperature
-55 °C
Country of Origin
China
Product details


