N-Channel MOSFET, 6 A, 400 V, 3-Pin TO-220AB Vishay SIHP6N40D-GE3

RS Stock No.: 787-9187Brand: VishayManufacturers Part No.: SIHP6N40D-GE3
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Technical documents

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

6 A

Maximum Drain Source Voltage

400 V

Series

D Series

Package Type

TO-220AB

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

1 Ω

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

104 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Maximum Operating Temperature

+150 °C

Length

10.51mm

Typical Gate Charge @ Vgs

9 nC @ 10 V

Width

4.65mm

Transistor Material

Si

Number of Elements per Chip

1

Height

9.01mm

Minimum Operating Temperature

-55 °C

Product details

N-Channel MOSFET, D Series High Voltage, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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₪ 16.50

₪ 3.30 Each (In a Pack of 5) (ex VAT)

₪ 19.30

₪ 3.861 Each (In a Pack of 5) (inc. VAT)

N-Channel MOSFET, 6 A, 400 V, 3-Pin TO-220AB Vishay SIHP6N40D-GE3
Select packaging type

₪ 16.50

₪ 3.30 Each (In a Pack of 5) (ex VAT)

₪ 19.30

₪ 3.861 Each (In a Pack of 5) (inc. VAT)

N-Channel MOSFET, 6 A, 400 V, 3-Pin TO-220AB Vishay SIHP6N40D-GE3
Stock information temporarily unavailable.
Select packaging type

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
You may be interested in

Technical documents

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

6 A

Maximum Drain Source Voltage

400 V

Series

D Series

Package Type

TO-220AB

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

1 Ω

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

104 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Maximum Operating Temperature

+150 °C

Length

10.51mm

Typical Gate Charge @ Vgs

9 nC @ 10 V

Width

4.65mm

Transistor Material

Si

Number of Elements per Chip

1

Height

9.01mm

Minimum Operating Temperature

-55 °C

Product details

N-Channel MOSFET, D Series High Voltage, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
You may be interested in