Technical documents
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
5.3 A
Maximum Drain Source Voltage
500 V
Series
D Series
Package Type
TO-220FP
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
1.5 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
30 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
10.63mm
Typical Gate Charge @ Vgs
10 nC @ 10 V
Transistor Material
Si
Width
4.83mm
Minimum Operating Temperature
-55 °C
Height
9.8mm
Product details
N-Channel MOSFET, D Series High Voltage, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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Please check again later.
₪ 55.35
₪ 11.07 Each (In a Pack of 5) (ex VAT)
₪ 64.76
₪ 12.952 Each (In a Pack of 5) (inc. VAT)
Standard
5
₪ 55.35
₪ 11.07 Each (In a Pack of 5) (ex VAT)
₪ 64.76
₪ 12.952 Each (In a Pack of 5) (inc. VAT)
Standard
5
Buy in bulk
quantity | Unit price | Per Pack |
---|---|---|
5 - 45 | ₪ 11.07 | ₪ 55.35 |
50 - 95 | ₪ 9.24 | ₪ 46.20 |
100 - 245 | ₪ 7.23 | ₪ 36.15 |
250 - 495 | ₪ 6.975 | ₪ 34.88 |
500+ | ₪ 6.345 | ₪ 31.72 |
Technical documents
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
5.3 A
Maximum Drain Source Voltage
500 V
Series
D Series
Package Type
TO-220FP
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
1.5 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
30 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
10.63mm
Typical Gate Charge @ Vgs
10 nC @ 10 V
Transistor Material
Si
Width
4.83mm
Minimum Operating Temperature
-55 °C
Height
9.8mm
Product details