Technical documents
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
3 A
Maximum Drain Source Voltage
500 V
Series
D Series
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
3.2 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
104 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Typical Gate Charge @ Vgs
6 nC @ 10 V
Width
6.22mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
6.73mm
Height
2.38mm
Minimum Operating Temperature
-55 °C
Product details
N-Channel MOSFET, D Series High Voltage, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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₪ 296.25
₪ 5.925 Each (In a Tube of 50) (ex VAT)
₪ 346.61
₪ 6.932 Each (In a Tube of 50) (inc. VAT)
50
₪ 296.25
₪ 5.925 Each (In a Tube of 50) (ex VAT)
₪ 346.61
₪ 6.932 Each (In a Tube of 50) (inc. VAT)
50
Buy in bulk
quantity | Unit price | Per Tube |
---|---|---|
50 - 200 | ₪ 5.925 | ₪ 296.25 |
250+ | ₪ 4.545 | ₪ 227.25 |
Technical documents
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
3 A
Maximum Drain Source Voltage
500 V
Series
D Series
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
3.2 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
104 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Typical Gate Charge @ Vgs
6 nC @ 10 V
Width
6.22mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
6.73mm
Height
2.38mm
Minimum Operating Temperature
-55 °C
Product details