Technical documents
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
21 A
Maximum Drain Source Voltage
600 V
Series
EF Series
Package Type
TO-263
Mounting Type
Through Hole
Pin Count
3
Channel Mode
Enhancement
Number of Elements per Chip
1
Transistor Material
Si
Country of Origin
China
P.O.A.
Vishay EF Series N-Channel MOSFET, 21 A, 600 V, 3-Pin D2PAK SIHB155N60EF-GE3
1
P.O.A.
Vishay EF Series N-Channel MOSFET, 21 A, 600 V, 3-Pin D2PAK SIHB155N60EF-GE3
Stock information temporarily unavailable.
1
Stock information temporarily unavailable.
Technical documents
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
21 A
Maximum Drain Source Voltage
600 V
Series
EF Series
Package Type
TO-263
Mounting Type
Through Hole
Pin Count
3
Channel Mode
Enhancement
Number of Elements per Chip
1
Transistor Material
Si
Country of Origin
China


