P-Channel MOSFET, 3.9 A, 60 V, 8-Pin PowerPAK 1212-8 Vishay SI7309DN-T1-E3
Technical documents
Specifications
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
3.9 A
Maximum Drain Source Voltage
60 V
Package Type
PowerPAK 1212-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
115 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
3.2 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Typical Gate Charge @ Vgs
14.5 nC @ 10 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
3.05mm
Width
3.05mm
Minimum Operating Temperature
-65 °C
Height
1.04mm
Country of Origin
China
Product details
P-Channel MOSFET, 30V to 80V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Stock information temporarily unavailable.
Please check again later.
₪ 8.824
Each (In a Pack of 5) (ex VAT)
₪ 10.324
Each (In a Pack of 5) (inc VAT)
5
₪ 8.824
Each (In a Pack of 5) (ex VAT)
₪ 10.324
Each (In a Pack of 5) (inc VAT)
5
Buy in bulk
| quantity | Unit price | Per Pack |
|---|---|---|
| 5 - 120 | ₪ 8.824 | ₪ 44.12 |
| 125 - 495 | ₪ 7.356 | ₪ 36.78 |
| 500 - 1245 | ₪ 6.824 | ₪ 34.12 |
| 1250 - 4995 | ₪ 6.475 | ₪ 32.37 |
| 5000+ | ₪ 6.111 | ₪ 30.56 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Technical documents
Specifications
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
3.9 A
Maximum Drain Source Voltage
60 V
Package Type
PowerPAK 1212-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
115 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
3.2 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Typical Gate Charge @ Vgs
14.5 nC @ 10 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
3.05mm
Width
3.05mm
Minimum Operating Temperature
-65 °C
Height
1.04mm
Country of Origin
China
Product details
P-Channel MOSFET, 30V to 80V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products