Technical documents
Specifications
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
3.1 A
Maximum Drain Source Voltage
60 V
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
150 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
2.4 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Width
4mm
Transistor Material
Si
Number of Elements per Chip
2
Length
5mm
Typical Gate Charge @ Vgs
14.5 nC @ 10 V
Maximum Operating Temperature
+175 °C
Height
1.5mm
Minimum Operating Temperature
-55 °C
Product details
Dual P-Channel MOSFET, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
₪ 234.00
₪ 9.36 Each (Supplied on a Reel) (ex VAT)
₪ 273.78
₪ 10.951 Each (Supplied on a Reel) (inc. VAT)
Production pack (Reel)
25
₪ 234.00
₪ 9.36 Each (Supplied on a Reel) (ex VAT)
₪ 273.78
₪ 10.951 Each (Supplied on a Reel) (inc. VAT)
Production pack (Reel)
25
Stock information temporarily unavailable.
Please check again later.
quantity | Unit price | Per Reel |
---|---|---|
25 - 120 | ₪ 9.36 | ₪ 46.80 |
125 - 620 | ₪ 7.26 | ₪ 36.30 |
625 - 1245 | ₪ 6.345 | ₪ 31.72 |
1250+ | ₪ 6.075 | ₪ 30.38 |
Technical documents
Specifications
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
3.1 A
Maximum Drain Source Voltage
60 V
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
150 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
2.4 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Width
4mm
Transistor Material
Si
Number of Elements per Chip
2
Length
5mm
Typical Gate Charge @ Vgs
14.5 nC @ 10 V
Maximum Operating Temperature
+175 °C
Height
1.5mm
Minimum Operating Temperature
-55 °C
Product details