P-Channel MOSFET, 7.2 A, 30 V, 8-Pin SOIC Vishay SI4431CDY-T1-GE3

RS Stock No.: 812-3215PBrand: VishayManufacturers Part No.: SI4431CDY-T1-GE3
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Technical documents

Specifications

Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

7.2 A

Maximum Drain Source Voltage

30 V

Package Type

SOIC

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

49 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

4.2 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Maximum Operating Temperature

+150 °C

Length

5mm

Typical Gate Charge @ Vgs

25 nC @ 10 V

Width

4mm

Transistor Material

Si

Number of Elements per Chip

1

Height

1.55mm

Minimum Operating Temperature

-55 °C

Country of Origin

China

Product details

P-Channel MOSFET, 30V to 80V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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₪ 5.328

Each (Supplied on a Reel) (ex VAT)

₪ 6.234

Each (Supplied on a Reel) (inc VAT)

P-Channel MOSFET, 7.2 A, 30 V, 8-Pin SOIC Vishay SI4431CDY-T1-GE3
Select packaging type

₪ 5.328

Each (Supplied on a Reel) (ex VAT)

₪ 6.234

Each (Supplied on a Reel) (inc VAT)

P-Channel MOSFET, 7.2 A, 30 V, 8-Pin SOIC Vishay SI4431CDY-T1-GE3
Stock information temporarily unavailable.
Select packaging type

Buy in bulk

quantityUnit pricePer Reel
20 - 80₪ 5.328₪ 106.56
100 - 480₪ 3.86₪ 77.19
500 - 1480₪ 3.104₪ 62.09
1500+₪ 2.741₪ 54.82

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
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Technical documents

Specifications

Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

7.2 A

Maximum Drain Source Voltage

30 V

Package Type

SOIC

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

49 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

4.2 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Maximum Operating Temperature

+150 °C

Length

5mm

Typical Gate Charge @ Vgs

25 nC @ 10 V

Width

4mm

Transistor Material

Si

Number of Elements per Chip

1

Height

1.55mm

Minimum Operating Temperature

-55 °C

Country of Origin

China

Product details

P-Channel MOSFET, 30V to 80V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more