Technical documents
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
12 A
Maximum Drain Source Voltage
30 V
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
33 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1.4V
Maximum Power Dissipation
5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Number of Elements per Chip
1
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Length
5mm
Typical Gate Charge @ Vgs
7.5 nC @ 10 V
Width
4mm
Minimum Operating Temperature
-55 °C
Height
1.55mm
Country of Origin
China
Product details
N-Channel MOSFET, 30V to 50V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Stock information temporarily unavailable.
Please check again later.
₪ 4.335
Each (Supplied on a Reel) (ex VAT)
₪ 5.072
Each (Supplied on a Reel) (inc VAT)
20
₪ 4.335
Each (Supplied on a Reel) (ex VAT)
₪ 5.072
Each (Supplied on a Reel) (inc VAT)
20
Buy in bulk
quantity | Unit price | Per Reel |
---|---|---|
20 - 20 | ₪ 4.335 | ₪ 86.70 |
40 - 180 | ₪ 3.734 | ₪ 74.67 |
200 - 380 | ₪ 3.272 | ₪ 65.45 |
400 - 780 | ₪ 2.923 | ₪ 58.45 |
800+ | ₪ 2.727 | ₪ 54.54 |
Technical documents
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
12 A
Maximum Drain Source Voltage
30 V
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
33 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1.4V
Maximum Power Dissipation
5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Number of Elements per Chip
1
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Length
5mm
Typical Gate Charge @ Vgs
7.5 nC @ 10 V
Width
4mm
Minimum Operating Temperature
-55 °C
Height
1.55mm
Country of Origin
China
Product details