P-Channel MOSFET, 4.7 A, 20 V, 3-Pin SOT-23 Vishay SI2365EDS-T1-GE3

RS Stock No.: 812-3139Brand: VishayManufacturers Part No.: SI2365EDS-T1-GE3
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Technical documents

Specifications

Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

4.7 A

Maximum Drain Source Voltage

20 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

67.5 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

0.4V

Maximum Power Dissipation

1.7 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, +8 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

3.04mm

Typical Gate Charge @ Vgs

23.8 nC @ 8 V

Width

1.4mm

Transistor Material

Si

Minimum Operating Temperature

-50 °C

Height

1.02mm

Country of Origin

China

Product details

P-Channel MOSFET, 8V to 20V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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₪ 2.126

Each (In a Pack of 50) (ex VAT)

₪ 2.487

Each (In a Pack of 50) (inc VAT)

P-Channel MOSFET, 4.7 A, 20 V, 3-Pin SOT-23 Vishay SI2365EDS-T1-GE3
Select packaging type

₪ 2.126

Each (In a Pack of 50) (ex VAT)

₪ 2.487

Each (In a Pack of 50) (inc VAT)

P-Channel MOSFET, 4.7 A, 20 V, 3-Pin SOT-23 Vishay SI2365EDS-T1-GE3
Stock information temporarily unavailable.
Select packaging type

Buy in bulk

quantityUnit pricePer Pack
50 - 250₪ 2.126₪ 106.28
300 - 550₪ 1.301₪ 65.03
600 - 1450₪ 1.105₪ 55.24
1500 - 2950₪ 0.797₪ 39.85
3000+₪ 0.755₪ 37.76

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Technical documents

Specifications

Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

4.7 A

Maximum Drain Source Voltage

20 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

67.5 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

0.4V

Maximum Power Dissipation

1.7 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, +8 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

3.04mm

Typical Gate Charge @ Vgs

23.8 nC @ 8 V

Width

1.4mm

Transistor Material

Si

Minimum Operating Temperature

-50 °C

Height

1.02mm

Country of Origin

China

Product details

P-Channel MOSFET, 8V to 20V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more