Technical documents
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
6 A
Maximum Drain Source Voltage
30 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
33 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
2.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Length
3.04mm
Typical Gate Charge @ Vgs
8.2 nC @ 10 V
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
1
Transistor Material
Si
Width
1.4mm
Height
1.02mm
Minimum Operating Temperature
-55 °C
Country of Origin
China
Product details
N-Channel MOSFET, 30V to 50V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
₪ 33.30
₪ 1.665 Each (In a Pack of 20) (ex VAT)
₪ 38.96
₪ 1.948 Each (In a Pack of 20) (inc. VAT)
Standard
20
₪ 33.30
₪ 1.665 Each (In a Pack of 20) (ex VAT)
₪ 38.96
₪ 1.948 Each (In a Pack of 20) (inc. VAT)
Stock information temporarily unavailable.
Standard
20
Stock information temporarily unavailable.
Technical documents
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
6 A
Maximum Drain Source Voltage
30 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
33 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
2.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Length
3.04mm
Typical Gate Charge @ Vgs
8.2 nC @ 10 V
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
1
Transistor Material
Si
Width
1.4mm
Height
1.02mm
Minimum Operating Temperature
-55 °C
Country of Origin
China
Product details


