Technical documents
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
1.15 A
Maximum Drain Source Voltage
100 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
2.4 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
1.25 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Number of Elements per Chip
1
Length
3.04mm
Width
1.4mm
Typical Gate Charge @ Vgs
1.45 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
1.02mm
Minimum Operating Temperature
-55 °C
Product details
N-Channel MOSFET, 100V to 150V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
₪ 285.00
₪ 5.70 Each (Supplied on a Reel) (ex VAT)
₪ 333.45
₪ 6.669 Each (Supplied on a Reel) (inc. VAT)
Production pack (Reel)
50
₪ 285.00
₪ 5.70 Each (Supplied on a Reel) (ex VAT)
₪ 333.45
₪ 6.669 Each (Supplied on a Reel) (inc. VAT)
Stock information temporarily unavailable.
Production pack (Reel)
50
Stock information temporarily unavailable.
quantity | Unit price | Per Reel |
---|---|---|
50 - 240 | ₪ 5.70 | ₪ 57.00 |
250 - 990 | ₪ 5.01 | ₪ 50.10 |
1000 - 2990 | ₪ 3.345 | ₪ 33.45 |
3000+ | ₪ 3.105 | ₪ 31.05 |
Technical documents
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
1.15 A
Maximum Drain Source Voltage
100 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
2.4 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
1.25 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Number of Elements per Chip
1
Length
3.04mm
Width
1.4mm
Typical Gate Charge @ Vgs
1.45 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
1.02mm
Minimum Operating Temperature
-55 °C
Product details