Technical documents
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
1.15 A
Maximum Drain Source Voltage
100 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
250 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
730 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Number of Elements per Chip
1
Length
3.04mm
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
3.3 nC @ 10 V
Width
1.4mm
Height
1.02mm
Minimum Operating Temperature
-55 °C
Country of Origin
China
Product details
N-Channel MOSFET, 100V to 150V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
₪ 62.55
₪ 6.255 Each (In a Pack of 10) (ex VAT)
₪ 73.18
₪ 7.318 Each (In a Pack of 10) (inc. VAT)
Standard
10
₪ 62.55
₪ 6.255 Each (In a Pack of 10) (ex VAT)
₪ 73.18
₪ 7.318 Each (In a Pack of 10) (inc. VAT)
Stock information temporarily unavailable.
Standard
10
Stock information temporarily unavailable.
| quantity | Unit price | Per Pack |
|---|---|---|
| 10 - 40 | ₪ 6.255 | ₪ 62.55 |
| 50 - 190 | ₪ 5.40 | ₪ 54.00 |
| 200 - 490 | ₪ 4.83 | ₪ 48.30 |
| 500+ | ₪ 4.245 | ₪ 42.45 |
Technical documents
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
1.15 A
Maximum Drain Source Voltage
100 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
250 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
730 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Number of Elements per Chip
1
Length
3.04mm
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
3.3 nC @ 10 V
Width
1.4mm
Height
1.02mm
Minimum Operating Temperature
-55 °C
Country of Origin
China
Product details


