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Vishay N-Channel MOSFET, 2.6 A, 20 V, 3-Pin SOT-23 SI2302DDS-T1-GE3

RS Stock No.: 152-6358Brand: VishayManufacturers Part No.: SI2302DDS-T1-GE3
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Technical documents

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

2.6 A

Maximum Drain Source Voltage

20 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

75 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

0.85V

Minimum Gate Threshold Voltage

0.4V

Maximum Power Dissipation

0.71 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±8 V

Number of Elements per Chip

1

Width

1.4mm

Length

3.04mm

Typical Gate Charge @ Vgs

3.5 nC @ 4.5 V

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Height

1.02mm

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Stock information temporarily unavailable.

₪ 83.62

₪ 3.345 Each (In a Pack of 25) (ex VAT)

₪ 97.84

₪ 3.914 Each (In a Pack of 25) (inc. VAT)

Vishay N-Channel MOSFET, 2.6 A, 20 V, 3-Pin SOT-23 SI2302DDS-T1-GE3
Select packaging type

₪ 83.62

₪ 3.345 Each (In a Pack of 25) (ex VAT)

₪ 97.84

₪ 3.914 Each (In a Pack of 25) (inc. VAT)

Vishay N-Channel MOSFET, 2.6 A, 20 V, 3-Pin SOT-23 SI2302DDS-T1-GE3
Stock information temporarily unavailable.
Select packaging type

Stock information temporarily unavailable.

Please check again later.

quantityUnit pricePer Pack
25 - 50₪ 3.345₪ 83.62
75+₪ 3.24₪ 81.00

Ideate. Create. Collaborate

JOIN FOR FREE

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design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical documents

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

2.6 A

Maximum Drain Source Voltage

20 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

75 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

0.85V

Minimum Gate Threshold Voltage

0.4V

Maximum Power Dissipation

0.71 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±8 V

Number of Elements per Chip

1

Width

1.4mm

Length

3.04mm

Typical Gate Charge @ Vgs

3.5 nC @ 4.5 V

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Height

1.02mm

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more