Technical documents
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
1.3 A
Maximum Drain Source Voltage
20 V
Package Type
SOT-363
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
263 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
0.4V
Maximum Power Dissipation
1.25 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-8 V, +8 V
Number of Elements per Chip
2
Length
2.2mm
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
1.6 nC @ 8 V
Width
1.35mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
1mm
Product details
Dual N-Channel MOSFET, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
₪ 147.00
₪ 2.94 Each (In a Pack of 50) (ex VAT)
₪ 171.99
₪ 3.44 Each (In a Pack of 50) (inc. VAT)
Standard
50
₪ 147.00
₪ 2.94 Each (In a Pack of 50) (ex VAT)
₪ 171.99
₪ 3.44 Each (In a Pack of 50) (inc. VAT)
Stock information temporarily unavailable.
Standard
50
Stock information temporarily unavailable.
| quantity | Unit price | Per Pack |
|---|---|---|
| 50 - 250 | ₪ 2.94 | ₪ 147.00 |
| 300 - 550 | ₪ 2.145 | ₪ 107.25 |
| 600 - 1450 | ₪ 1.725 | ₪ 86.25 |
| 1500 - 2950 | ₪ 1.395 | ₪ 69.75 |
| 3000+ | ₪ 1.365 | ₪ 68.25 |
Technical documents
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
1.3 A
Maximum Drain Source Voltage
20 V
Package Type
SOT-363
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
263 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
0.4V
Maximum Power Dissipation
1.25 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-8 V, +8 V
Number of Elements per Chip
2
Length
2.2mm
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
1.6 nC @ 8 V
Width
1.35mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
1mm
Product details


