Technical documents
Specifications
Brand
VishayChannel Type
N, P
Maximum Continuous Drain Current
400 mA, 700 mA
Maximum Drain Source Voltage
20 V
Package Type
SOT-363
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
1.48 Ω, 578 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
0.6V
Maximum Power Dissipation
340 mW
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-12 V, +12 V
Maximum Operating Temperature
+150 °C
Length
2.2mm
Typical Gate Charge @ Vgs
1.2 nC @ 10 V, 1.9 nC @ 10 V
Width
1.35mm
Transistor Material
Si
Number of Elements per Chip
2
Height
1mm
Minimum Operating Temperature
-55 °C
Product details
Dual N/P-Channel MOSFET, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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Please check again later.
₪ 3.021
Each (In a Pack of 20) (ex VAT)
₪ 3.534
Each (In a Pack of 20) (inc VAT)
20
₪ 3.021
Each (In a Pack of 20) (ex VAT)
₪ 3.534
Each (In a Pack of 20) (inc VAT)
20
Buy in bulk
quantity | Unit price | Per Pack |
---|---|---|
20 - 280 | ₪ 3.021 | ₪ 60.41 |
300 - 580 | ₪ 2.00 | ₪ 39.99 |
600 - 1480 | ₪ 1.65 | ₪ 33.00 |
1500 - 2980 | ₪ 1.259 | ₪ 25.17 |
3000+ | ₪ 1.161 | ₪ 23.21 |
Technical documents
Specifications
Brand
VishayChannel Type
N, P
Maximum Continuous Drain Current
400 mA, 700 mA
Maximum Drain Source Voltage
20 V
Package Type
SOT-363
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
1.48 Ω, 578 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
0.6V
Maximum Power Dissipation
340 mW
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-12 V, +12 V
Maximum Operating Temperature
+150 °C
Length
2.2mm
Typical Gate Charge @ Vgs
1.2 nC @ 10 V, 1.9 nC @ 10 V
Width
1.35mm
Transistor Material
Si
Number of Elements per Chip
2
Height
1mm
Minimum Operating Temperature
-55 °C
Product details