Technical documents
Specifications
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
1.6 A
Maximum Drain Source Voltage
20 V
Package Type
SOT-363 (SC-70)
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
222 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
0.6V
Maximum Power Dissipation
600 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-12 V, +12 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
2.2mm
Typical Gate Charge @ Vgs
1.4 nC @ 4.5 V
Width
1.35mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
1mm
Product details
P-Channel MOSFET, 8V to 20V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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₪ 1.384
Each (Supplied as a Tape) (ex VAT)
₪ 1.619
Each (Supplied as a Tape) (inc VAT)
25
₪ 1.384
Each (Supplied as a Tape) (ex VAT)
₪ 1.619
Each (Supplied as a Tape) (inc VAT)
25
Buy in bulk
quantity | Unit price | Per Tape |
---|---|---|
25 - 100 | ₪ 1.384 | ₪ 34.61 |
125 - 225 | ₪ 1.301 | ₪ 32.51 |
250 - 975 | ₪ 1.203 | ₪ 30.07 |
1000 - 2975 | ₪ 1.007 | ₪ 25.17 |
3000+ | ₪ 0.993 | ₪ 24.82 |
Technical documents
Specifications
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
1.6 A
Maximum Drain Source Voltage
20 V
Package Type
SOT-363 (SC-70)
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
222 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
0.6V
Maximum Power Dissipation
600 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-12 V, +12 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
2.2mm
Typical Gate Charge @ Vgs
1.4 nC @ 4.5 V
Width
1.35mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
1mm
Product details