Technical documents
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
1.3 A
Maximum Drain Source Voltage
100 V
Package Type
HVMDIP
Mounting Type
Through Hole
Pin Count
4
Maximum Drain Source Resistance
270 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
1.3 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-10 V, +10 V
Typical Gate Charge @ Vgs
12 nC @ 5 V
Width
6.29mm
Transistor Material
Si
Length
5mm
Maximum Operating Temperature
+175 °C
Number of Elements per Chip
1
Height
3.37mm
Minimum Operating Temperature
-55 °C
Product details
N-Channel MOSFET, 100V to 150V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
₪ 126.38
₪ 5.06 Each (Supplied in a Bag) (ex VAT)
₪ 147.86
₪ 5.92 Each (Supplied in a Bag) (inc. VAT)
Production pack (Bag)
25
₪ 126.38
₪ 5.06 Each (Supplied in a Bag) (ex VAT)
₪ 147.86
₪ 5.92 Each (Supplied in a Bag) (inc. VAT)
Stock information temporarily unavailable.
Production pack (Bag)
25
Stock information temporarily unavailable.
| quantity | Unit price |
|---|---|
| 25 - 49 | ₪ 5.06 |
| 50 - 99 | ₪ 4.90 |
| 100 - 249 | ₪ 4.24 |
| 250+ | ₪ 4.18 |
Technical documents
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
1.3 A
Maximum Drain Source Voltage
100 V
Package Type
HVMDIP
Mounting Type
Through Hole
Pin Count
4
Maximum Drain Source Resistance
270 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
1.3 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-10 V, +10 V
Typical Gate Charge @ Vgs
12 nC @ 5 V
Width
6.29mm
Transistor Material
Si
Length
5mm
Maximum Operating Temperature
+175 °C
Number of Elements per Chip
1
Height
3.37mm
Minimum Operating Temperature
-55 °C
Product details


