Vishay N-Channel MOSFET, 1.3 A, 100 V, 4-Pin HVMDIP IRLD120PBF

RS Stock No.: 543-0484PBrand: VishayManufacturers Part No.: IRLD120PBF
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Technical documents

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

1.3 A

Maximum Drain Source Voltage

100 V

Package Type

HVMDIP

Mounting Type

Through Hole

Pin Count

4

Maximum Drain Source Resistance

270 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

1.3 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-10 V, +10 V

Typical Gate Charge @ Vgs

12 nC @ 5 V

Width

6.29mm

Transistor Material

Si

Length

5mm

Maximum Operating Temperature

+175 °C

Number of Elements per Chip

1

Height

3.37mm

Minimum Operating Temperature

-55 °C

Product details

N-Channel MOSFET, 100V to 150V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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₪ 126.38

₪ 5.06 Each (Supplied in a Bag) (ex VAT)

₪ 147.86

₪ 5.92 Each (Supplied in a Bag) (inc. VAT)

Vishay N-Channel MOSFET, 1.3 A, 100 V, 4-Pin HVMDIP IRLD120PBF
Select packaging type

₪ 126.38

₪ 5.06 Each (Supplied in a Bag) (ex VAT)

₪ 147.86

₪ 5.92 Each (Supplied in a Bag) (inc. VAT)

Vishay N-Channel MOSFET, 1.3 A, 100 V, 4-Pin HVMDIP IRLD120PBF

Stock information temporarily unavailable.

Select packaging type

Stock information temporarily unavailable.

quantityUnit price
25 - 49₪ 5.06
50 - 99₪ 4.90
100 - 249₪ 4.24
250+₪ 4.18

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JOIN FOR FREE

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design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical documents

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

1.3 A

Maximum Drain Source Voltage

100 V

Package Type

HVMDIP

Mounting Type

Through Hole

Pin Count

4

Maximum Drain Source Resistance

270 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

1.3 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-10 V, +10 V

Typical Gate Charge @ Vgs

12 nC @ 5 V

Width

6.29mm

Transistor Material

Si

Length

5mm

Maximum Operating Temperature

+175 °C

Number of Elements per Chip

1

Height

3.37mm

Minimum Operating Temperature

-55 °C

Product details

N-Channel MOSFET, 100V to 150V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more