Technical documents
Specifications
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
1.9 A
Maximum Drain Source Voltage
200 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
3 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
25 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Length
6.73mm
Typical Gate Charge @ Vgs
8.9 nC @ 10 V
Number of Elements per Chip
1
Width
6.22mm
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Height
2.38mm
Minimum Operating Temperature
-55 °C
Product details
P-Channel MOSFET, 100V to 400V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
₪ 549.00
₪ 5.49 Each (Supplied on a Reel) (ex VAT)
₪ 642.33
₪ 6.423 Each (Supplied on a Reel) (inc. VAT)
Production pack (Reel)
100
₪ 549.00
₪ 5.49 Each (Supplied on a Reel) (ex VAT)
₪ 642.33
₪ 6.423 Each (Supplied on a Reel) (inc. VAT)
Stock information temporarily unavailable.
Production pack (Reel)
100
Stock information temporarily unavailable.
| quantity | Unit price | Per Reel |
|---|---|---|
| 100 - 190 | ₪ 5.49 | ₪ 54.90 |
| 200+ | ₪ 5.475 | ₪ 54.75 |
Technical documents
Specifications
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
1.9 A
Maximum Drain Source Voltage
200 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
3 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
25 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Length
6.73mm
Typical Gate Charge @ Vgs
8.9 nC @ 10 V
Number of Elements per Chip
1
Width
6.22mm
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Height
2.38mm
Minimum Operating Temperature
-55 °C
Product details


